Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide
Zhengquan Zhou,
Weihua Wu,
Yu Li
et al.
Abstract:Radio frequency magnetron sputtering was used to prepare the amorphous GeTe thin films on silicon dioxide and the thickness effects on the crystallization behavior were investigated. With the film thickness reducing, the crystallization temperature, crystallization activation energy, amorphous and crystalline resistance increase remarkably, indicating the great improvement in thermal stability and power consumption. Ozawa’s model was used to estimate the crystallization kinetics of GeTe thin films, it shows th… Show more
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