Study on Porosity in Zinc Oxide Ultrathin Films from Three-Step MLD Zn-Hybrid Polymers

Berger, Richard; Seiler, Martin; Perrotta, Alberto; Coclite, Anna Maria

doi:10.3390/ma14061418

Cited by 3 publications

(6 citation statements)

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“…The decrease in the refractive index during the cooling phase is an effect known for stable crystalline ZnO films [ 47 ]. The remaining ZnO exhibits a higher mass density and consequently a higher electron density, which also results in a higher index of refraction [ 37 ]. Compared to the literature, similar behavior has been observed for ZnO obtained from MLD zincone via calcination [ 36 , 37 ] or also for alumina from calcinated alucone films [ 48 ].…”

Section: Resultsmentioning

confidence: 99%

“…In this way, pores with a diameter ≥0.33 nm (i.e., the kinetic diameter of the water molecules) were probed. More on the theoretical background of this procedure is available in the literature [ 35 , 37 , 44 ].…”

Section: Methodsmentioning

confidence: 99%

“…Subsequent calcination at 400 °C led to an open porosity of approximately 19% in the obtained ZnO thin film. A further increase in porosity was obtained by changing to a three-step MLD process, employing DEZ as the metal precursor together with two organic precursors (maleic anhydride and ethanolamine) [ 37 ]. The calcinated samples showed an open porosity of 25% when calcinated at 400 °C.…”

Section: Introductionmentioning

confidence: 99%

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Tuning the Porosity of Piezoelectric Zinc Oxide Thin Films Obtained from Molecular Layer-Deposited “Zincones”

Kräuter

Ali²,

Stadlober³

et al. 2022

Materials

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Porous zinc oxide (ZnO) thin films were synthesized via the calcination of molecular layer-deposited (MLD) “zincone” layers. The effect of the MLD process temperature (110 °C, 125 °C) and of the calcination temperature (340 °C, 400 °C, 500 °C) on the chemical, morphological, and crystallographic properties of the resulting ZnO was thoroughly investigated. Spectroscopic ellipsometry reveals that the thickness of the calcinated layers depends on the MLD temperature, resulting in 38–43% and 52–56% of remaining thickness for the 110 °C and 125 °C samples, respectively. Ellipsometric porosimetry shows that the open porosity of the ZnO thin films depends on the calcination temperature as well as on the MLD process temperature. The maximum open porosity of ZnO derived from zincone deposited at 110 °C ranges from 14.5% to 24%, rising with increasing calcination temperature. Compared with the 110 °C samples, the ZnO obtained from 125 °C zincone yields a higher porosity for low calcination temperatures, namely 18% for calcination at 340 °C; and up to 24% for calcination at 500 °C. Additionally, the porous ZnO thin films were subjected to piezoelectric measurements. The piezoelectric coefficient, d33, was determined to be 2.8 pC/N, demonstrating the potential of the porous ZnO as an, e.g., piezoelectric sensor or energy harvester.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tuning the Porosity of Piezoelectric Zinc Oxide Thin Films Obtained from Molecular Layer-Deposited “Zincones”

Kräuter

Ali²,

Stadlober³

et al. 2022

Materials

Self Cite

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“…Diethylzinc is the most common precursor for zinc in the ALD/MLD processes; it is often combined with HQ, [54,55,66,107,133,230,[244][245][246][247]250,361,366,[370][371][372][373][374][375][376][377][378] but also with many other organic components. [46,48,115,134,211,212,226,228,233,238,239,241,265,272,278,324,345,349,[379][380][381][382][383][384][385][386][387][388]…”

Section: Aluminum- Zinc- and Titanium-based Processesmentioning

confidence: 99%

“…Diethylzinc is the most common precursor for zinc in the ALD/MLD processes; it is often combined with HQ, [ 54,55,66,107,133,230,244–247,250,361,366,370–378 ] but also with many other organic components. [ 46,48,115,134,211,212,226,228,233,238, 239,241,265,272,278,324,345,349,379–390 ] The DEZ + HQ process has been widely utilized for the growth of different superlattice structures in which the Zn–HQ layers are combined with thicker ZnO layers grown with ALD cycles from DEZ plus H 2 O. Another zinc precursor employed in ALD/MLD is zinc acetate.…”

Section: Brief Account Of Ald/mld Processes Developedmentioning

confidence: 99%

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Multia

Karppinen

2022

Adv Materials Inter

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organic ligands act as bridges between the metal centers to form infinite 1D, 2D, or 3D structures. These materials are often referred to as coordination polymer (CP) [1] or metal-organic framework (MOF) [2] materials; the latter term is used when the metal-organic material is crystalline and highly porous. [3] The research field of CP-and MOF-type materials has grown tremendously over the last two decades. The structural and chemical diversity of these materials has served as a continuous source of scientific excitement; the same diversity has also triggered huge technological interest as these materials possess enormous potential to be tailored for a wide variety of applications ranging from gas capture, storage, and separation to sensing, catalysis, optics, electronics, and energy storage. [4][5][6][7] Most of the targeted application breakthroughs of metal-organics require that these materials can be produced as highquality thin films and coatings, which can be integrated with the other components in the actual device configuration. The possibility to deposit such thin films in an industry-feasible manner on the substrate types needed, would be a major step forward in the field. [8] Traditionally, solvent-based processes such as liquid-phase epitaxy, Langmuir-Blodgett, layer-by-layer, and electrochemical deposition techniques have been used for metal-organic thin films. [9][10][11] These are, however, incompatible with the requirements set by the possible integration of the materials in microelectronics. This is due to corrosion and contamination risks, and the problems in patterning and precise deposition on high-aspect-ratio features. Hence, it is vital to develop solventfree thin-film deposition routes for the metal-organic material family. In the optimal case, these deposition methods should allow conformal coatings on large-area and high-aspect-ratio substrates.The currently strongly emerging ALD/MLD technique is uniquely suited to address the challenge in a scientifically elegant yet industrially feasible way. This technique is derived from the two parent gas-phase thin-film techniques: ALD for inorganic materials (mostly binary metal oxides, sulfides, and nitrides), [12][13][14] and its counterpart MLD for purely organic thin films (e.g., polyimides and polyamides). [15] In both cases, the attractive film growth characteristics are derived from the unique way of separating the different precursor gas pulses. Currently, ALD is the standard thin-film technology in many Atomic layer deposition (ALD) for high-quality conformal inorganic thin films is one of the cornerstones of modern microelectronics, while molecular layer deposition (MLD) is its less-exploited counterpart for purely organic thin films. Currently, the hybrid of these two techniques, i.e., ALD/MLD, is strongly emerging as a state-of-the-art gas-phase route for designer's metal-organic thin films, e.g., for the next-generation energy technologies. The ALD/MLD literature comprises nearly 300 original journal papers covering most of the alkali...

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Review of molecular layer deposition process and application to area selective deposition via graphitization

Baek

Yang

Park

et al. 2023

Jpn. J. Appl. Phys.

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As patterning technology for manufacturing highly integrated devices develops in the current semiconductor market, sophisticated technology nodes of 5 nm or smaller are required. Area selective deposition (ASD) is a promising technology alternative to traditional top-down methods by reducing-edge placement error (EPE) and creating self-alignment. A new strategy for applying the qualified molecular layer deposition (MLD) process of highly conformal deposition to ASD as an inhibition material is being studied. In the case of metalcones manufactured using an aromatic ring as an organic precursor, graphitic carbonization proceeds through high-temperature annealing, and the inhibition property can be activated by removing surface functional groups. The characteristics of feasible patterning can be noted as metal elements in the thin film are removed during the annealing process, especially in the case of graphitic carbon. In this review, we introduce the potential application of MLD materials in the development of inhibitors for advanced ASD

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Study on Porosity in Zinc Oxide Ultrathin Films from Three-Step MLD Zn-Hybrid Polymers

Cited by 3 publications

References 24 publications

Tuning the Porosity of Piezoelectric Zinc Oxide Thin Films Obtained from Molecular Layer-Deposited “Zincones”

Tuning the Porosity of Piezoelectric Zinc Oxide Thin Films Obtained from Molecular Layer-Deposited “Zincones”

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Review of molecular layer deposition process and application to area selective deposition via graphitization

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