Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

Wang, Peizhi; Wang, Jinshi

doi:10.1007/s41871-021-00116-4

Cited by 28 publications

(14 citation statements)

References 59 publications

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“…Summarizing, monolayer GO or GO exceeding 16 layers presents an excellent wear resistance when the interfacial interaction between GO and the substrate is strong enough (Figure ). It is well known that the silicon-based materials are widely used in micro/nano-electromechanical systems (MEMS/NEMS) based on the well-established semiconductor manufacturing techniques. , However, severe wear due to strong interfacial adhesion and tribochemical reactions has become a critical issue for moving components. − Our results indicate that, compared to multilayer GO, GO monolayers are the best candidate to lubricate dynamic MEMS/NEMS . Furthermore, the wear resistance of few-layer GO strongly depends on the interfacial interaction with the underlying substrate (Figures , , and ).…”

Section: Resultsmentioning

confidence: 73%

“…It is well known that the silicon-based materials are widely used in micro/nano-electromechanical systems (MEMS/NEMS) based on the well-established semiconductor manufacturing techniques. 52,53 However, severe wear due to strong interfacial adhesion and tribochemical reactions has become a critical issue for moving components. 54−56 Our results indicate that, compared to multilayer GO, GO monolayers are the best candidate to lubricate dynamic MEMS/NEMS.…”

Section: Resultsmentioning

confidence: 99%

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Layer-Dependent Nanowear of Graphene Oxide

et al. 2023

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The mechanical performance and surface friction of graphene oxide (GO) were found to inversely depend on the number of layers. Here, we demonstrate the non-monotonic layer-dependence of the nanowear resistance of GO nanosheets deposited on a native silicon oxide substrate. As the thickness of GO increases from ∼0.9 nm to ∼14.5 nm, the nanowear resistance initially demonstrated a decreasing and then an increasing tendency with a critical number of layers of 4 (∼3.6 nm in thickness). This experimental tendency corresponds to a change of the underlying wear mode from the overall removal to progressive layer-by-layer removal. The phenomenon of overall removal disappeared as GO was deposited on an H-DLC substrate with a low surface energy, while the nanowear resistance of thicker GO layers was always higher. Combined with density functional theory calculations, the wear resistance of few-layer GO was found to correlate with the substrate's surface energy. This can be traced back to substrate-dependent adhesive strengths of GO, which correlated with the GO thickness originating from differences in the interfacial charge transfer. Our study proposes a strategy to improve the antiwear properties of 2D layered materials by tuning their own thickness and/or the interfacial interaction with the underlying substrate.

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Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Layer-Dependent Nanowear of Graphene Oxide

et al. 2023

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“…In this study, PASE is proved to be an effective atomic-scale Si smoothing technique with a high degree of controllability, which is extremely important for the development of atomic and close-to-atomic scale manufacturing. 33,34…”

Section: + +mentioning

confidence: 99%

“…Although dry and wet etching of Si have been widely studied, tuning the etching mode in a highly controllable way via plasma etching has not been previously reported. In this study, PASE is proved to be an effective atomic-scale Si smoothing technique with a high degree of controllability, which is extremely important for the development of atomic and close-to-atomic scale manufacturing. , …”

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confidence: 92%

Tuning the Plasma Etching Mode for the Atomic-Scale Smoothing of Single-Crystal Silicon

Zhang

et al. 2022

J. Phys. Chem. Lett.

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Atomic-scale smooth surfaces of single-crystal silicon (Si) are indispensable for cutting-edge applications, such as semiconductor chips, quantum devices, and X-ray optics. Here, we vary the CF 4 /O 2 reactant gas ratio to tune the etching mode from isotropic and orientation-selective etching to atom-selective etching in an atmospheric inductively coupled plasma (ICP). At low CF 4 /O 2 ratios, the diffusion of the etching species dominates, resulting in isotropic etching. By contrast, the kinetics of ICP etching becomes dominant upon increasing the CF 4 /O 2 ratio to between 1:1 and 2:1, inducing orientation-selective etching. Notably, CF 4 /O 2 ratios above 2:1 result in atom-selective etching, whereby atoms around rough surface sites can be selectively removed. The atom-selective etching mode was used to achieve an atomically smooth surface with a S a roughness of 0.14 nm. The results of this study demonstrate that atom-selective etching is an efficient and effective approach for manufacturing Si atomic surfaces.

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“…This includes contact lens manufacturing, which utilises many of these technological advancements [ 4 ]. Recently, sustainability is a hot topic, which applies to manufacturing technology- smarter, more efficient methods of production [ 5 , 6 , 7 ]. Sustainable manufacturing can be considered less wasting of energy and materials, involving less use of polluting materials, and more use of materials from reliable sources.…”

Section: Introductionmentioning

confidence: 99%

Manufacturing of Soft Contact Lenses Using Reusable and Reliable Cyclic Olefin Copolymer Moulds

et al. 2022

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We present experimental evidence of reusable, reliable cyclic olefin copolymer (COC) moulds in soft contact lens manufacturing. The moulds showed high performance surface roughness characteristics despite >20 kW exposure to 365 nm ultraviolet (UV) light from repeated use. Ultra-precision manufacturing techniques were used to fabricate transparent COC mould inserts and to produce soft contact lenses from liquid monomer compositions. Both polymer and silicone hydrogels were fabricated with more than 60 individual uses of the moulds. White light interferometry measured the surface roughness (Sa) of the COC moulds to be almost unchanged before and after repeated use (Sa 16.3 nm before vs. 16.6 nm after). The surface roughness of the prototyped lenses and that of commercially available soft contact lenses were then compared by white light interferometry. The surface roughness of the lenses was also nearly unchanged, despite undergoing more than 60 uses of the COC moulds (lens Sa 24.4 nm before vs. after Sa 26.5 nm). By comparison the roughness of the commercial lenses ranged from 9.3–28.5 nm, including conventional and silicone lenses, indicating that the reusable COC moulds produced competitive surface properties. In summary, COC moulds have potential as reusable and reliable mould inserts in the manufacturing of soft contact lenses, yet maintain high quality optical surfaces even after sustained exposure to UV light.

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Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale

Cited by 28 publications

References 59 publications

Layer-Dependent Nanowear of Graphene Oxide

Layer-Dependent Nanowear of Graphene Oxide

Tuning the Plasma Etching Mode for the Atomic-Scale Smoothing of Single-Crystal Silicon

Manufacturing of Soft Contact Lenses Using Reusable and Reliable Cyclic Olefin Copolymer Moulds

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