Study on Improving Precision of Analysis of Boost Ratio and Power Efficiency of Tapped‐Inductor DC–DC Converter Circuit

Abstract

SUMMARY Analysis precision of boost ratio and power efficiency in boost DC–DC converter circuit is improved by proposing adaptive equivalent circuit of output diode of the circuit. In experiment, boost ratio and power efficiency in high boost ratio circuit were 9.89% and 76.5% respectively with its load resistance of 20 Ω driven by output voltage 10 V. In experimental results, error in theoretical values of boost ratio compared with the measured values of that was reduced to −3.79% from 57.5% in the conventional circuit. In a tapped‐inductor high boost ratio circuit, error in theoretical values of boost ratio was reduced to 3.54% from 31.8%. Error in theoretical values of power efficiency with the measured values of that was reduced to 5.51% from 33.2% in the conventional circuit. In a high boost ratio circuit, error in theoretical values of power efficiency was reduced to −3.32% from 17.3%. Power loss of every element in boost DC–DC converter circuits was analyzed with high precision by analysis of inductance current waveforms in those circuits. Error in theoretical values of power loss compared with measured values was reduced to equal or less than 5%.

Fault logic circuit design of switching power supply based on soft reference circuit module

“…Nowadays, the research of synchronous rectification technology mainly focuses on the research-based on new materials such as GaN and SiC [7]. Reference [8] is based on SiC synchronous rectification MOSFET and adopts dynamic rectification control to achieve low switching loss and high turn-off voltage up to 1700 V. Reference [9] discusses the research on the turn-on voltage drop and switching loss of the synchronous rectification MOSFET with Trench channel structure, and analyzes the prospect of mass production of the MOSFET with Trench channel structure. In recent years, ROHM has successfully mass-produced the synchronous rectification MOSFET with a double Trench channel structure, which has extremely low turn-on voltage drop and high withstand voltage value up to 1.2kV [10].…”