Study on cut-off characteristics of sub-nanosecond silicon carbide PiN switch

Wu, Zhaoyang; Wei, Lu; Bao, Xiangyang; Meng, Fanbao; Yang, Zhaochu; Sun, Qian; Zhao, Fangzhou; Wang, Yutian

doi:10.1142/s0217979221501071

Cited by 3 publications

(2 citation statements)

References 17 publications

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“…Within these reconfigurable systems, RF switches assume a pivotal role as core devices. Considering factors such as integration compatibility, process complexity, and device size, the commonly employed types of RF switches typically include mechanical switches, semiconductor switches, and Micro-Electro-Mechanical Systems (MEMSs) [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, semiconductor switches are better suited for high-speed switch applications and offer ease of integration into semiconductor substrates like silicon and gallium arsenide (GaAs). Although semiconductor switches like Positive–Intrinsic–Negative (PIN) diodes [ 4 , 5 , 6 ] and Field Effect Transistor (FET) switches [ 7 , 8 ] are known for their compact size and cost-effective integration into other front-end RF modules, they are also susceptible to distortion, leakage, voltage breakdown, and high non-linearity. Compared with mechanical switches and semiconductor switches, MEMSs have high isolation and good linearity.…”

Section: Introductionmentioning

confidence: 99%

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A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs). Focusing on the prototypical structure of indirectly heated RFPCSs as the reference, the intrinsic properties of each material layer and the rationale behind the material selection is analyzed. Furthermore, the design size of each material layer of the device and its subsequent RF performance are summarized. Finally, we cast our gaze toward the promising future prospects of RFPCS technology.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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Analysis of P _cs(4338) and related pentaquark molecular states via QCD sum rules*

Wang

2023

Chinese Phys. C

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In this work, we tentatively identify the $P_{cs}(4338)$ as the $\bar{D}\Xi_c$ molecular state, and distinguish the isospins of the current operators to explore the $\bar{D}\Xi_c$, $\bar{D}\Lambda_c$, $\bar{D}_s\Xi_c$, $\bar{D}_s\Lambda_c$, $\bar{D}^*\Xi_c$, $\bar{D}^*\Lambda_c$, $\bar{D}^*_s\Xi_c$ and $\bar{D}^*_s\Lambda_c$ molecular states without strange, with strange and with double strange in the framework of the QCD sum rules in details. The present explorations favor identifying the $P_{cs}(4338)$ ($P_{cs}(4459)$) as the $\bar{D}\Xi_c$ ($\bar{D}^*\Xi_c$) molecular state with the spin-parity $J^P={\frac{1}{2}}^-$ (${\frac{3}{2}}^-$) and isospin $(I,I_3)=(0,0)$, the observation of their cousins with the isospin $(I,I_3)=(1,0)$ in the $J/\psi\Sigma^0/\eta_c\Sigma^0$ invariant mass distributions would decipher their inner structures. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Article funded by SCOAP3 and published under licence by Chinese Physical Society and the Institute of High Energy Physics of the Chinese Academy of Science and the Institute of Modern Physics of the Chinese Academy of Sciences and IOP Publishing Ltd.

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Optimization of electrical properties and RF applications of GeTe thin film

Shuai,

Zheng,

Chen

et al. 2024

Acta Phys. Sin.

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GeTe belongs to a chalcogenide phase change material, which can dynamically achieve reversible switching between low resistivity crystalline state and the high resistivity amorphous state of by utilizing the thermally induced phase change characteristics. The GeTe is an important functional material in the fields of memristors and nonvolatile RF switches. For RF switch applications, this paper focuses on optimizing the electrical performance of GeTe thin films prepared by magnetron sputtering. By comprehensively analyzing the effects of substrate materials, sputtering conditions, and annealing conditions on the resistivity of crystalline GeTe films, effective conditions for preparing low resistivity GeTe films are explored. Figure (a) shows that compared with the GeTe film on a SiO2 substrate, the film on an Al2O3 substrate can obtain high crystallinity and low resistivity. For the deposition power and pressure shown in Fig. (b), the combination of medium power (50–80W) and low pressure (2–3 mTorr) is beneficial for low crystalline resistivity of GeTe film. Additionally, Fig. (c) shows that higher annealing temperature (350–400 ℃) can realize lower film resistivity. Finally, the experimental results show that the lowest crystalline resistivity of the prepared GeTe thin film reaches 3.6×10–6 Ω·m, and the resistance ratio is more than 106. Based on rectangular chips of GeTe film, a parallel millimeter-wave switch with zero static power is also constructed. As shown in Fig. (d), the insertion loss is less than 2.4 dB, and the isolation is greater than 19 dB in a 1–40 GHz frequency band, demonstrating the potential application of GeTe thin films in the field of broadband high-performance discrete nonvolatile RF switches.

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Study on cut-off characteristics of sub-nanosecond silicon carbide PiN switch

Cited by 3 publications

References 17 publications

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Analysis of P _cs(4338) and related pentaquark molecular states via QCD sum rules*

Optimization of electrical properties and RF applications of GeTe thin film

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Study on cut-off characteristics of sub-nanosecond silicon carbide PiN switch

Cited by 3 publications

References 17 publications

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Analysis of P cs (4338) and related pentaquark molecular states via QCD sum rules*

Optimization of electrical properties and RF applications of GeTe thin film

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Product

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Analysis of P _cs(4338) and related pentaquark molecular states via QCD sum rules*