2019
DOI: 10.1364/ao.58.003986
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Study on auto bias control of a silicon optical modulator in a four-level pulse amplitude modulation format

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Cited by 3 publications
(2 citation statements)
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“…However, the bias point of an MZM will drift over time due to various factors (e.g., temperature change). This bias point drift is independent of materials, be it lithium niobite (LiNbO 3 ), gallium arsenide (GaAs), indium phosphide (InP), or silicon, and greatly affects the MZM performance [60,61] . By adjusting the phase shifters on the arms of the MZM through closed-loop bias control, the bias drift can be canceled out.…”
Section: Feedback Bias Controlmentioning
confidence: 99%
“…However, the bias point of an MZM will drift over time due to various factors (e.g., temperature change). This bias point drift is independent of materials, be it lithium niobite (LiNbO 3 ), gallium arsenide (GaAs), indium phosphide (InP), or silicon, and greatly affects the MZM performance [60,61] . By adjusting the phase shifters on the arms of the MZM through closed-loop bias control, the bias drift can be canceled out.…”
Section: Feedback Bias Controlmentioning
confidence: 99%
“…In 2017 and 2018, Li et al proposed conventional point bias control methods and arbitrary point control methods for IQ modulators based on dither-correlation detection [12], [13] . In 2019, Chen et al proposed a novel ABC method for four-level pulse amplitude modulation format silicon modulator [14] . In 2023, Li et al proposed a lowdisturbance ABC method for optical IQ modulators using digital chaotic waveform as dither signals [15] .…”
Section: Introductionmentioning
confidence: 99%