Study of ZnO sol–gel films: Effect of annealing

Ivanova, T.; Harizanova, A.; Koutzarova, T.; Vertruyen, Bénédicte

doi:10.1016/j.matlet.2010.02.033

Cited by 164 publications

(51 citation statements)

References 22 publications

(20 reference statements)

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“…2 and the FTIR data is summarized in Table 2. FTIR analysis of pure sol-gel ZnO films has been previously reported [23]. The infrared spectra of ZnO films, treated at 400, 500 and 600 °C showed that the main absorption band (very strong) is located near 395 cm -1 and after the highest temperature annealing it slightly shifted to 403 cm -1 .…”

Section: Vibrational Propertiesmentioning

confidence: 74%

“…4 presents the influence of the thermal treatments on the optical properties for TiO 2 and ZnO-TiO 2 films. Optical properties of spin-coated ZnO films have been previously reported [23]. The transparency of ZnO films is significantly affected by the annealing temperature.…”

Section: Fig 4 Uv-vis Spectra Of Sol-gel Tio 2 (A) and Zno-tio 2 (Bmentioning

confidence: 91%

“…On the other hand, the spectrum of ZnO film, annealed at 400 °C reveals five well defined XRD maxima, indicating polycrystalline structure. These peaks correspond to hexagonal wurtzite phase [23].…”

Section: Xrd Studymentioning

confidence: 99%

“…The films were deposited by dip-coating method on Si and glass substrates. We had some research on sol-gel preparation and investigation of ZnO films [23]. The films, subject of this study were spincoated on silicon and glass substrates.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and characterization of ZnO–TiO2 films obtained by sol-gel method

Ivanova

Harizanova

Koutzarova

et al. 2011

Journal of Non-Crystalline Solids

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The sol-gel route has been applied to obtain ZnO-TiO 2 thin films. For comparison, pure TiO 2 and ZnO films are also prepared from the corresponding solutions. The films are deposited by a spin-coated method on silicon and glass substrates. Their structural and vibrational properties have been studied as a function of the annealing temperatures (400-750 °C). Pure ZnO films crystallize in a wurtzite modification at a relatively low temperature of 400 °C, whereas the mixed oxide films show predominantly amorphous structure at this temperature. XRD analysis shows that by increasing the annealing temperatures, the sol-gel Zn/Ti oxide films reveal a certain degree of crystallization and their structures are found to be mixtures of wurtzite ZnO, Zn 2 TiO 4 , anatase TiO 2 and amorphous fraction. The XRD analysis presumes that Zn 2 TiO 4 becomes a favored phase at the highest annealing temperature of 750 °C. The obtained thin films are uniform with no visual defects. The optical properties of ZnO-TiO 2 films have been compared with those of single component films (ZnO and TiO 2 ). The mixed oxide films present a high transparency with a slight decrease by increasing the annealing temperature.

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Section: Vibrational Propertiesmentioning

confidence: 74%

Section: Fig 4 Uv-vis Spectra Of Sol-gel Tio 2 (A) and Zno-tio 2 (Bmentioning

confidence: 91%

Section: Xrd Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Preparation and characterization of ZnO–TiO2 films obtained by sol-gel method

Ivanova

Harizanova

Koutzarova

et al. 2011

Journal of Non-Crystalline Solids

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“…7. The spectrum of AZO-1 was compared to pure ZnO thin films as discussed by Ivanova et al (2010). The relative positions of IR bands depend on chemical composition and morphology of crystallites within the film.…”

Section: Resultsmentioning

confidence: 99%

Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization

et al. 2015

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In this study, pure ZnO and Al-doped ZnO thin films were developed on glass by sol-gel process followed by drying and annealing in air at 170 and 400°C, respectively. The surface morphology and structural characteristics were determined through scanning electron microscopy, atomic force microscopy and X-ray diffraction. The Fourier transform infrared spectroscopy validated the formation of Al-doped ZnO film on glass substrate. It was evaluated that 1 at% aluminum (Al) doping in ZnO film showed low electrical resistivity and higher charge carrier concentration due to uniformly dispersed regular shape crystallites as compared to pure ZnO and 2 at% 'Al'-doped thin films.

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Photostability Improvement of Organic Photodiodes with ZnO Electron Transport Layer

Wijaya

Yokota

Lee

et al. 2023

Advanced Photonics Research

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Organic photodiodes (OPDs) have demonstrated unique mechanical properties, such as flexibility and stretchability, and can be used as on-skin conformable photodetectors or imagers, for example, to measure biosignals with high reliability. [1][2][3][4][5] Simultaneously, substantial research has demonstrated OPDs with a high specific detectivity comparable with that of commercial silicon photodiodes (%10 12 -10 13 Jones). [6,7] This most representative metric of OPDs has been improved by both enhancing the photoresponsivity and lowering the dark current. [8][9][10][11][12][13] One simple and effective technique to reduce the dark current regardless of the OPD structure is the careful selection and process optimization of the electron transport layer (ETL). [14][15][16][17] ZnO is a well-known and widely used ETL material for OPDs owing to its low work function, high optical transmittance, and easy processing. [18,19] ZnO ETL can be deposited via sputtering, a method that is adaptable to established commercial OPD fabrication. [20,21] However, its general adoption in OPDs is chiefly promoted by its sol-gel processability at low temperatures. [22] This solution processability enables printability and large-area processing of the ZnO ETL, [23,24] which are important assets of OPDs. Utilizing these materials and process advantages, the ZnO ETL has been widely incorporated into a variety of high-performance OPDs, thereby contributing to lowering the dark current and achieving high detectivity (%10 12 Jones) photodetectors in the ultraviolet (UV), visible, and near-infrared ranges. [25][26][27] In addition to their high optoelectronic performance, the application of OPDs with ZnO ETLs as flexible near-infrared photodetectors and imagers has been reported with demonstrated skin conformability and biosignal measurements. [4,5] Recently, to prepare OPDs for commercialization, their performance stability has become essential, and the stability of the photocurrent and dark current values has become the benchmark in exhibiting such stability. [12,26,[28][29][30][31][32] For instance, a study demonstrated the operation of ultraflexible OPDs with ZnO ETL with air stability for more than 10 days, where the photocurrent changed by less than 1% and the dark current changed by a maximum of 2.5, even without a high-barrier passivation layer. [28] The same OPDs underwent 1000 repetitive bending tests, thereby demonstrating the mechanical stability of the OPDs with only 5% change in the photocurrent and dark current change by a maximum of five times. In addition to storage and mechanical stability, stability with respect to external irradiation is critical, given their wide application as photodetectors. The photocurrent

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Study of ZnO sol–gel films: Effect of annealing

Cited by 164 publications

References 22 publications

Preparation and characterization of ZnO–TiO2 films obtained by sol-gel method

Preparation and characterization of ZnO–TiO2 films obtained by sol-gel method

Formation of Al-doped ZnO thin films on glass by sol–gel process and characterization

Photostability Improvement of Organic Photodiodes with ZnO Electron Transport Layer

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