2013
DOI: 10.1016/j.apsusc.2013.04.103
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Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

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Cited by 30 publications
(9 citation statements)
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“…The increase in process pressure decreases the kinetic energy of the dopant atoms. This reduces surface diffusion and decreases the amount of active dopants and subsequently the carrier concentration[21]. Besides, the reduction of the carrier concentration with the pressure could be explained in terms of segregation of Al content into the grain boundaries.…”
mentioning
confidence: 99%
“…The increase in process pressure decreases the kinetic energy of the dopant atoms. This reduces surface diffusion and decreases the amount of active dopants and subsequently the carrier concentration[21]. Besides, the reduction of the carrier concentration with the pressure could be explained in terms of segregation of Al content into the grain boundaries.…”
mentioning
confidence: 99%
“…For long wavelengths (650-800 nm), the AlTi films have a reflectance of around 85%-88%, while the Ag film has a reflectance of around 97%. The lower reflectance of the AlTi films at higher pressure can be explained by more collision among sputtered atoms and argon ions, lowering the density of the sputtered films [18]. This is also reflected by the measurement of the refractive index, as shown in Figure 1b.…”
Section: Introductionmentioning
confidence: 72%
“…Currently, two HJ structures, namely, n-type indium tin oxide (n-ITO)/n-Si and n-type ZnO-base/n-Si, are commonly investigated; the optimal conversion efficiency of which is 16.5 %, as achieved by Kobayashi et al [10], and 9.4 %, as demonstrated in our previous study (Al-Y co-doped ZnO/n-Si) [11], respectively. However, the low build-in potential (V bi ) of the N-N structure limits the open circuit voltage (V oc ) of the cell.…”
Section: Introductionmentioning
confidence: 95%