“…The focus of recent theoretical and experimental research on the optoelectronic properties of VO 2 was the manipulation of the PTT. The PTT has been manipulated by various thin film synthesis methods: − − creation of internal and side defects, such as the oxygen vacancies, doping with impurities, ,,− use of a single-crystalline substrate with preferred orientations, ,, deposition of a buffer layer, , controlling the lattice constant parameters, and post-thermal treatments. − In addition, the semiconductor-to-metal phase transitions of other monoclinic M 1 and M 2 (stressed or strained, internal defected, intermediate phase) phases of VO 2 were studied . Quackenbush et al reported that the M 2 phase is more stable and transforms faster into the rutile structure than M 1 due to its large stress-free transformation, which is stable over a wide temperature range .…”