2013
DOI: 10.1155/2013/797232
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Study of Ultraviolet Emission Spectra in ZnO Thin Films

Abstract: Photoluminescence (PL) of ZnO thin films prepared on c-Al2O3substrates by pulsed laser deposition (PLD) are investigated. For all samples, roomtemperature (RT) spectra show a strong band-edge ultraviolet (UV) emission with a pronounced low-energy band tail. The origin of this UV emission is analyzed by the temperature dependence of PL spectra. The result shows that the UV emission at RT contains different recombination processes. At low temperature donor-bound exciton (D0X) emission plays a major role in PL sp… Show more

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Cited by 22 publications
(14 citation statements)
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“…The typical photoluminescence spectra of ZnO have emission bands in the UV and visible regions. Usually, the UV luminescence peak is considered as the characteristics emission of ZnO and it is ascribed to the band edge emission or transition of exciton [31]. It is exciting to note that there is no UV emission peak in the PL spectra of prepared samples.…”
Section: Photoluminescence (Pl) Characteristicmentioning
confidence: 99%
“…The typical photoluminescence spectra of ZnO have emission bands in the UV and visible regions. Usually, the UV luminescence peak is considered as the characteristics emission of ZnO and it is ascribed to the band edge emission or transition of exciton [31]. It is exciting to note that there is no UV emission peak in the PL spectra of prepared samples.…”
Section: Photoluminescence (Pl) Characteristicmentioning
confidence: 99%
“…Относительно природы поло-сы 374 nm (3.31 eV) в литературе нет единого мнения. Энергетическое положение полосы позволяет связы-вать ее с несколькими излучательными процессами, в частности, с излучением 1LO-свободного экситона [1], с переходом свободный электрон−акцептор [13][14][15], с излучением связанных экситонов, в локализованных на акцепторе [16,17] с двухэлектронными процессами в излучении связанных экситонов [18] и др. Поло-са наблюдается в широком температурном интервале от гелиевых до комнатных температур.…”
Section: рисunclassified
“…Zinc oxide (ZnO) is a type II-VI transparent semiconductor compound with n-type natural conductivity, which is ensured by the existence of "defects" related to interstitial zinc atoms and oxygen vacancies. Its notable properties: high exciton binding energy, a wide bandgap around 3.37 eV and a high chemical and physical stability [1]. These properties make it a suitable host material for different dopants, such as boron B [2], aluminum Al [3], gallium Ga [4] and fluoride F [5].…”
Section: Introductionmentioning
confidence: 99%