Growth and Characterization of (Tb,Yb) Co-Doping Sprayed ZnO Thin Films

hat, A. El; Chaki, I.; Essajai, R.; Mzerd, A.; Schmerber, G.; Regragui, M.; Belayachi, A.; Sekkat, Zouheir; Dinia, A.; Slaoui, A.; Abd‐Lefdil, M.

doi:10.3390/cryst10030169

Cited by 15 publications

(4 citation statements)

References 32 publications

(34 reference statements)

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“…Ytterbium/Terbium co-doped ZnO thin films exhibited highest carrier density of 2.3 × 10 21 cm −3 and lowest electrical resistivity of 6.0 × 10 −3 Ohm•cm. The (optical) band-gap energies of undoped ZnO and (Yb-Tb):ZnO, estimated from photoluminescence spectra, were 3.27 and 3.23-3.21 eV, respectively [55]. Band-gap shrinkage has commonly been observed on Al:ZnO, B:ZnO, and Cu:ZnO processed by hydrothermal techniques [56][57][58].…”

Section: Introductionmentioning

confidence: 99%

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Papadimitriou

2022

Micromachines

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Resistivity and transparency of zinc-oxide layers (ZnO) for chalcopyrite photovoltaic technology applications were engineered by activation of the Burstein–Moss (BM) effect at high concentrations of aluminium (Al) and indium (In) dopant. The Al:ZnO and In:ZnO layers were processed by cost-effective, large-area, fast-rate electrochemical deposition techniques from aqueous solution of zinc nitrate (Zn(NO3)2) and dopant trichlorides, at negative electrochemical potential of EC = (−0.8)–(−1.2) V, moderate temperature of 80 °C, and solute dopant concentrations of AlCl3 and InCl3 up to 20 and 15 mM, respectively. Both Al:ZnO and In:ZnO layers were deposited on Mo/glass substrates with ZnO and ZnO/ZnSe buffers (Al:ZnO/ZnO/Mo/glass, In:ZnO/ZnO/ZnSe/Mo/glass), respectively. Based on the band-gap energy broadening of Al:ZnO and In:ZnO originated by the BM effect, maximum carrier concentrations of the order 1020 and 1021 cm−3, respectively, were determined by optical characterization techniques. The (electrical) resistivity values of Al:ZnO calculated from optical measurements were commensurate with the results of electrical measurements (10−4 Ohm×cm). In both cases (Al:ZnO and In:ZnO), calibration of carrier density in dependence of solute dopant concentration (AlCl3 and InCl3) was accomplished. The p–n junctions of Au/In:ZnO/ZnO/ZnSe/CIGS/Mo on glass substrate exhibited current–voltage (I–V) characteristics competing with those of crystalline silicon (c-Si) solar cells.

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Section: Introductionmentioning

confidence: 99%

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Papadimitriou

2022

Micromachines

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“…In this respect, several experimental and theoretical studies have investigated the physical properties of DMS materials [6][7][8][9][10]. More specifically, in the spintronic area, various undoped compounds and compounds doped and co-doped with metallic elements have been experimentally and theoretically investigated, such as CuS [11], GaN [12], PbS [13], ZnO [14,15], and ZnS [16]. The primary property that should be associated with all DMS materials designed for spintronic applications is half-metallicity.…”

Section: Introductionmentioning

confidence: 99%

Co-, Fe-, Ni-doped and co-doped rutile GeO₂: insights from ab-initio calculations

Essajai¹,

Ez‐Zahraouy²

2022

Commun. Theor. Phys.

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The rutile germanium oxide semiconductor (rutile-GeO2) could act as a half-metallic compound and be promising for spintronic and optoelectronic applications. The calculations have been performed within Korringa-Kohn-Rostoker (KKR) approach combined with the coherent potential approximation (CPA) which are combined with two approximations, the Local Density-Approximation (LDA) then the self-interaction corrected LDA approximation (LDA-SIC) in order to study the electronic structure of bulk rutile-GeO2 doped and co-doped with three transition metals impurities Fe, Co and Ni. The doping value is set to a value of 10% while the co-doping is set to 5% for each impurity. The main findings in this work are: (1) A direct ultrawide bandgap of 4.80 eV is observed and the rutile-GeO2 exhibits N-type semiconducting property. (2) The doped and co-doped GeO2 acquires a magnetic behavior and shows a half-metallicity feature. (3) The mechanism responsible of this property is also studied. (4) The critical temperature can achieve 334 K when doped with Fe while may raises to 398 K when it is co-doped with Fe and Co. (5) The spin polarization can be improved with co-doping. It can be inferred that rutile-GeO2 doped or co-doped with (Co, Fe) transition metals can be considered as a potential candidate for spintronic and optoelectronic applications.

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“…A number of studies have been carried out on ZnO based co-doped systems. Tb and Yb co-doped ZnO films indicated the potential for the photons' down-conversion in photovoltaic cells [27]. In a more recent study devoted to tuning of optical properties, Ce and Co were co-doped in ZnO [28].…”

Section: Introductionmentioning

confidence: 99%

Band gap reduction and quenching of p-d exchange interaction in sol-gel derived Zn(Al,Cu)O nanostructures

et al. 2021

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The objective of the present study is to address the gap in the fundamental knowledge on the effect of doping and co-doping in ZnO nanostructures. In this regard, we explore the significant impact of Al- and Cu co-doping on band-gap and associated changes in the ZnO system. Sol-gel co-precipitation was used to synthesize ZnO-based nanostructures to accomplish the objective. Crystallite size determined by XRD was in the range of 6.44-37.58 nm and the lattice constant, c, initially decreased with co-doping, accompanied by an increase. Strong co-doping with Cu altered the nature of microstrain from tensile to compressive. FTIR studies predicted that Al and Cu were incorporated at Zn-O site through the formation of Al-O and Cu-O bonds, while UV-vis studies suggested the reduction of the band-gap when Al and Cu were incorporated in ZnO. The underlying reason was Cu-3d and O-2p exchange interaction in Zn(Al,Cu)O system. Quenching of this exchange interaction occurred in the presence of specific combination of dopant and co-dopant, along with blocking of the low energy transitions, eventually leading to a band-gap slightly greater than undoped ZnO. Furthermore, the emission peak observed in the photoluminescence spectra implied redshift induced by Al-doping, which was not influenced on Cu co-doping. Another important observation was the presence of ferromagnetic character in all samples, where saturation magnetization decreased with the increase in Al and Cu content in ZnO matrix, a behaviour attributed to anti-ferromagnetic coupling of spins of Cu ions at the substitutional sites of Zn-O. Lastly, electron microscopy revealed that the morphology of undoped ZnO transformed from granular to sand-rose on doping with Al, while Cu co-doping led to the formation of heavy clusters. The new insights on the band-gap reduction and associated structural changes in doped ZnO-based nanostructured materials have the potential for next generation of spintronic devices.

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Growth and Characterization of (Tb,Yb) Co-Doping Sprayed ZnO Thin Films

Cited by 15 publications

References 32 publications

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Co-, Fe-, Ni-doped and co-doped rutile GeO₂: insights from ab-initio calculations

Band gap reduction and quenching of p-d exchange interaction in sol-gel derived Zn(Al,Cu)O nanostructures

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Growth and Characterization of (Tb,Yb) Co-Doping Sprayed ZnO Thin Films

Cited by 15 publications

References 32 publications

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Co-, Fe-, Ni-doped and co-doped rutile GeO2: insights from ab-initio calculations

Band gap reduction and quenching of p-d exchange interaction in sol-gel derived Zn(Al,Cu)O nanostructures

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Co-, Fe-, Ni-doped and co-doped rutile GeO₂: insights from ab-initio calculations