2013
DOI: 10.1016/j.spmi.2012.12.012
|View full text |Cite
|
Sign up to set email alerts
|

Study of transmission properties in GaAs/AlxGa1−xAs superlattices generated by a specific sequences

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 40 publications
0
2
0
Order By: Relevance
“…In particular, in two and three envelopes with the addition of one and two extra B seeds, respectively. Terkhi and collaborators found an analogous behavior for the transmission probability in AlGaAs/GaAs superlattices [26]. The G ⇑⇓ τzsz s are suppressed in the energy interval 3.0∆ so < ∆ z < 3.6∆ so , see the shaded strip in figures 3(b), (d) and (f).…”
Section: Resultsmentioning
confidence: 60%
See 1 more Smart Citation
“…In particular, in two and three envelopes with the addition of one and two extra B seeds, respectively. Terkhi and collaborators found an analogous behavior for the transmission probability in AlGaAs/GaAs superlattices [26]. The G ⇑⇓ τzsz s are suppressed in the energy interval 3.0∆ so < ∆ z < 3.6∆ so , see the shaded strip in figures 3(b), (d) and (f).…”
Section: Resultsmentioning
confidence: 60%
“…In the case of AlGaAs/GaAs semiconductor superlattices, extended unit cells in monomer, dimer, and trimer fashion are an alternative for band gap engineering due to the possibility of duplicate, triplicate, and in general multiply the number of minibands and minigaps in a specific energy region [26]. In the case of monomer superlattices the unit cell is composed of two dissimilar barriers alternated with two quantum wells.…”
Section: Introductionmentioning
confidence: 99%