Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices

Abstract

Monomer, dimer and trimer semiconductor superlattices are an alternative for bandgap engineering due to the possibility of duplicate, triplicate and in general multiply the number of minibands and minigaps in a specific energy region. Here, we show that monomer, dimer and trimer magnetic silicene superlattices (MSSLs) can be the basis for tunable magnetoresistive devices due to the multiplication of the peaks of the tunneling magnetoresistance (TMR). In addition, these structures can serve as spin-valleytronic devices due to the formation of two well-defined spin-valley polarization states by adjusting appropriately the superlattice structural parameters. We obtain these conclusions by studying the spin-valley polarization and TMR of monomer, dimer and trimer MSSLs. The magnetic unit cell is structured