Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

Abstract

This paper addresses, for the first time, an analysis of the total quantum efficiency of lateral SOI PIN photodiodes with different intrinsic lengths in the 300 to 500 K range simultaneously considering back-gate bias and temperature influences. Experimental results showed that the mode of operation changes the behavior of the devices concerning dark and photocurrents, while the temperature variation produces different trades in quantum efficiency related to the absorption length and the diffusion length variation.

Graphene-gated lateral P–I–N photodiode based on silicon-on-insulator process

“…An appropriate antireflection coating (ARC) improves quantum efficiency significantly. 1,5) From the figure, it can be seen that, as L a decreases, both the available photocurrent and I K decrease accordingly. According to the process design rules, there is always a minimum length limit for L AK .…”

“…In several papers, the substrate is shown to function as a backgate and provides partial controllability. 5) However, from the integration perspective, the substrate electrode is usually connected to the ground in order not to affect the functionality and performance of circuits.…”