Study of TiN and TaN Underlayer Properties and Their Influence on W Growth

Pancharatnam, S.; Rodríguez, Gabriel Peña; Wang, W.; Karve, Gauri; Wynne, J.; Mendoza, Brock; DeVries, S.; Pujari, R. N.; Breton, M.; Carr, Adra; White, Lisamarie

doi:10.1109/tsm.2019.2945916

Cited by 4 publications

(2 citation statements)

References 9 publications

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“…However, local topographical variations from underfill, dishing, or erosion can all lead to resistance delta inevitably, as shown in Figs. 7. For a more thorough characterization of such variation, the level-sensor on an immersion lithographic scanner is applied to scan post-CMP wafers.…”

Section: Resultsmentioning

confidence: 99%

“…4,5 Thickness and properties of underlying glue or liner layers can affect W morphology and crystallinity. 6,7 Fluorine-free atomic layer deposited (ALD) W liner material has demonstrated lower resistivity and improved CVD W gap fill. 8 The application of cyclic pulsing during CVD process is shown to reduce the amount of fluorine impurity in the resulting W. 9 W deposition using the CVD method usually leaves behind seams or voids in the middle of the fill due to re-entrant profile in the deposition sequence.…”

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confidence: 99%

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Process Co-Optimization of CVD and CMP for Tungsten Metallization

Pancharatnam

Tseng

Choi

et al. 2020

ECS J. Solid State Sci. Technol.

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Chemical vapor deposition (CVD) and chemical-mechanical planarization (CMP) of tungsten have been the enabling process technologies for semiconductor manufacturing. Despite the long history and relative maturity, however, their combined effects on the electrical performance and topographic variation of W metallization are scarcely reported in the open literature. A previous work on Cu plating demonstrates the feasibility of reducing topography and improving electrical resistance uniformity by manipulating Cu plating process for superior incoming filling across different patterns and line widths within the die. Adopting the similar concept, this study utilizes SiH 4 and WF 6 gas chemistry in a CVD-W process optimized for reduced seam formation. 300 mm wafers with varying W overburden thickness are deposited and polished in order to examine the impacts on resulting resistance uniformity across different line widths, and within-die topography. It will be demonstrated that CVD W overburden thickness alone plays a critical role in the performance of W local interconnects across patterns of varying geometry and feature size. Thicker incoming overburden thickness can improve CMP process window and help mitigate variations in sheet resistance plus local and within-die topography, which can perpetuate during down-stream process and impact device performance adversely. Co-optimization of CVD-W and WCMP processes is pivotal to the performance of W metallization.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Process Co-Optimization of CVD and CMP for Tungsten Metallization

Pancharatnam

Tseng

Choi

et al. 2020

ECS J. Solid State Sci. Technol.

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Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride

Yeon¹,

Jung²,

Byun³

et al. 2021

AIP Advances

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A novel atomic layer deposition (ALD) that utilizes tertiary alkyl (tert-alkyl) halides as both growth activator and inhibitor is introduced and demonstrated for the deposition of a low resistive TiN film using TiCl4 and NH3. Among the alkyl halides, tert-butyl iodide is identified as a suitable material for both growth inhibition and growth activation without any incorporation of C impurity in the film. The electrical resistivity values of TiN thin films in activator-type and inhibitor-type ALD were significantly improved by 55% and 49%, respectively. The mechanism of the reduction in electrical resistivity is elucidated by means of theoretical approach and characterizations of TiN films. For activator-type ALD, tert-butyl iodide induces in situ ligand exchange with an adsorbed Ti precursor to form Ti–I bonds, leading to an increase in the reactivity with a NH3 reactant. For inhibitor-type ALD, the improvement of film conformality in a high aspect ratio (>22:1) substrate is exhibited. This study demonstrates that the effectiveness on the use of tert-alkyl halides in ALD deposition can serve as an important guideline for future studies of the growth activator and growth inhibitor to improve film properties, making the method widely applicable.

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Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2

Belahcen

Vallée

Bsiesy

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Deposition of titanium nitride thin films by plasma enhanced atomic layer deposition has been realized on thermal silicon oxide substrates in an inductively coupled plasma reactor. The plasma step involves a H2 (40 sccm)/N2 (5 sccm)/Ar (10 sccm) gas mixture, and growth has been followed by in situ ellipsometric measurements. A tunable substrate bias voltage has been applied in the vicinity of the substrate to modulate plasma-ion energy and investigate its impact on the growth mechanism. We have observed that an increase in the applied bias power leads to a gradual TiN nucleation delay of up to 30 cycles at 80 W radio frequency bias power. An increase in the H2 content of the plasma gas mixture shows that hydrogen species from the plasma can significantly deactivate the SiO2 substrate, thanks to reduction reactions induced by H3+, Ar+, and ArH+ ions leading to the formation of Si–H surface bonds. A nitrogen-rich plasma gas mixture results in N atom incorporation on the substrate surface, which in turn favors subsequent TiN growth. The combination of hydrogen-rich plasma chemistry with a high applied substrate bias power leads to a TiN growth delay larger than 50 cycles. These results provide a valuable implementation for the development of area-selective deposition processes.

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Study of TiN and TaN Underlayer Properties and Their Influence on W Growth

Cited by 4 publications

References 9 publications

Process Co-Optimization of CVD and CMP for Tungsten Metallization

Process Co-Optimization of CVD and CMP for Tungsten Metallization

Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride

Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2

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