Study of Thin Oxide Films by Electron, Ion and Synchrotron Radiation Beams

Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

“…The films grown at higher temperatures showed no absorption lines in the range of 2000-1000 cm − 1 . This supports the assumption that these bands are due to carbon containing functional groups as the concentration of carbon-related residues significantly decreases in the films grown from Ti(OC 2 H 5 ) 4 with increasing deposition temperature [31,32].…”

“…This influence is, at least partially, related to the chemical composition of the films. Halides lead to contamination with halide ion residues, whereas alkoxides are an additional source of residual carbon, being also prone to thermal decomposition [30][31][32]. The amount of residues and, thus, compositional and structural disorder increases with the decrease in deposition temperature.…”

“…It is commonly known that the lower the deposition temperature the higher the content of residual impurities and amorphicity of films [26,[30][31][32]. At substrate temperatures where the crystal growth becomes possible, lower temperatures favour the growth of anatase and at higher temperatures the formation of rutile is more probable [26][27][28][29][30].…”

“…In ALD processes, the crystalline structure, Available online at www.sciencedirect.com Thin Solid Films 516 (2008) 4855 -4862 www.elsevier.com/locate/tsf phase and chemical composition and thus the dielectric properties of TiO 2 films can be tuned by the selection of process parameters, e.g. deposition temperature, precursor chemistry and precursor dosing [26][27][28][29][30][31][32][33].…”

Structural study of TiO2 thin films by micro-Raman spectroscopy

“…Detailed descriptions of the method, as well as its application for analysis of TiO 2 thin films measurements, have been published in earlier papers by Sammelselg et al [34,37].…”