AlN thin films were grown by the Atomic Layer E p i t q (ALE) technique employing AIC13 and NH3 as precursors. A growth rate of 1.0 &cycle was obtained in experiments carried out at 500 "C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [OOll direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.
Strontium titanate thin films were grown by atomic layer deposition (ALD) at 250±325 C from the novel strontium compound, strontium bis(tri-isopropyl cyclopentadienyl), titanium tetraisopropoxide, and water. Though completely self-limiting, deposition of strontium could not be achieved because of some minor decomposition of the strontium compound. This decomposition was slow enough to ensure that good control of film stoichiometry was obtained by controlling either the (Sr-O)/ (Ti-O) pulsing ratio, or the strontium precursor exposure time. The films were polycrystalline and strongly oriented in the (100) direction. After annealing at 500 C in air, the films with the optimal composition were found to have measured permittivity values of around 180.
The induced co-deposition mechanism in one-step electrodeposition of Cu 2Ϫx Se and CuInSe 2 thin films was investigated. Cu 2Ϫx Se and CuInSe 2 thin films were deposited potentiostatically on Mo substrates by a one-step process from an acidic electrolyte containing SCN Ϫ ions as complexing agents. The films were examined by scanning electron microscopy, energy dispersive X-ray spectrometry, X-ray diffraction, and ion beam analysis methods. Good control of stoichiometry was achieved over a wide potential range, thus indicating that the film composition may indeed be controlled by the induced co-deposition mechanism. The effects of the thiocyanate ions on the reduction potentials of Cu ϩ , In 3ϩ , and Se 4ϩ ions were examined by cyclic voltammetry. In order to improve their crystallinity, the CuInSe 2 films were annealed under a N 2 atmosphere after deposition.
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