Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping

Kartopu, Giray; Oklobia, Ochai; Türkay, Deniz; Diercks, David R.; Gorman, Brian P.; Barrioz, Vincent; Campbell, Stephen A.; Major, Jonathan D.; Turkestani, M. K. Al; Yerci, Selçuk; Barnes, Teresa M.; Beattie, Neil; Zoppi, Guillaume; Jones, Stephen J.; Irvine, S.J.C.

doi:10.1016/j.solmat.2019.02.025

Cited by 67 publications

(35 citation statements)

References 46 publications

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“…In Figure 7b, we observe a small increase in the slope of the EQE at long wavelengths for devices on which mild CHT was carried out. This feature has been previously reported for CdTe:As solar cells with varied As doping [11], to be associated with increasing N A , and is consistent with our measured acceptor concentration (see Figure 7c).…”

Section: Resultssupporting

confidence: 93%

“…In our baseline CdTe thin film solar cell structure (Figure 1a), according to a superstrate configuration, a heavily As-doped (~10 19 atoms cm −3 ) CdTe cap layer, denoted by the p+-CdTe back contact layer (BCL) was found to lower the device’s series resistance [5], resulting in efficiencies as high as 13.0% being achieved. However, dopability with CdTe is challenging, as a recent study by Kartopu et al [11] has shown As doping of polycrystalline CdTe with an upper limit of ~3 × 10 16 cm −3 . Nevertheless, p-type doping of ZnTe to very high levels is achievable in comparison, where doping concentrations as high as 1 × 10 18 cm −3 for in-situ doped ZnTe:As have been reported [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells

2019

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As-doped polycrystalline ZnTe layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated as a back contact for CdTe solar cells. While undoped ZnTe films were essentially insulating, the doped layers showed significant rise in conductivity with increasing As concentration. High p-type carrier densities up 4.5 × 1018 cm−3 was measured by the Hall-effect in heavily doped ZnTe:As films, displaying electrical properties comparable to epitaxial ZnTe single crystalline thin films in the literature. Device incorporation with as-deposited ZnTe:As yielded lower photovoltaic (PV) performance compared to reference devices, due to losses in the open-circuit potential (VOC) and fill factor (FF) related to reducing p-type doping density (NA) in the absorber layer. Some minor recovery observed in absorber doping following a Cl-free post–ZnTe:As deposition anneal in hydrogen at 420 °C contributed to a slight improvement in VOC and NA, highlighting the significance of back contact activation. A mild CdCl2 activation process on the ZnTe:As back contact layer via a sacrificial CdS cap layer has been assessed to suppress Zn losses, which occur in the case of standard CdCl2 anneal treatments (CHT) via formation of volatile ZnCl2. The CdS sacrificial cap was effective in minimising the Zn loss. Compared to untreated and non-capped, mild CHT processed ZnTe:As back contacted devices, mild CHT with a CdS barrier showed the highest recovery in absorber doping and an ~10 mV gain in VOC, with the best cell efficiency approaching the baseline devices.

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Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells

2019

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“…a) depicts a linear rise in open-circuit voltage (VOC) with (𝑁 > 2 × 10 𝑐𝑚 ). Fig.5(b) depicts a linear reduction in short-circuit current density (JSC) with (𝑁 > 2 × 10 𝑐𝑚 ), this can be ascribed to an increase in free carrier charge recombination inside the bulk[64]. On the other hand, fill factor (FF%) as shown in Fig.5 (c), increases linearly with (𝑁 > 2 × 10 𝑐𝑚 ).…”

mentioning

confidence: 86%

Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non-Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS-1D Software

Zyoud¹,

Zyoud²,

Ahmed³

et al. 2021

Preprint

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Cadmium telluride (CdTe), a metallic dichalcogenide material, has been utilized as an absorber layer for thin film-based solar cells with appropriate configurations, and the SCAPS-1D structures program has been used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin film buffer layer has been frequently employed as a traditional n-type heterojunction partner. In this study, numerical simulation was used to find a suitable non-toxic material for the buffer layer instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS, and In2S3), and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. carrier concentrations (NA from 2 x 1012 cm-3 to 2 x 1017 cm-3 and ND from 1 x 1016 cm-3 to 1 x 1022 ??−3) have been differed. The results showed that the CdS as buffer layer based CdTe absorber layer solar cell has the highest efficiency (?%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% have been found for ZnSe and ZnO based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin-film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high-efficiency metal oxide-based solar cells in the lab.

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“…Концентрация дырок в слоях, выращенных при отношении ДИПТ/ДМК = 1, увеличивается с продолжительностью отжига и достигает максимального значения p = 1 • 10 17 см −3 в течение 60 мин. Этот результат несколько выше значений, полученных в [11,12,15,16], и близок к рекордным значениям концентраций дырок p = (1−2) • 10 17 см −3 в легированных мышьяком эпитаксиальных слоях CdTe, полученных методом MOCVD [6,13,21,22]. Тем не менее доля электрически активного мышьяка в слоях CdTe, полученных с использованием ДИПТ (∼ 4.5%), существенно ниже доли в слоях CdTe, полученных ранее с использованием ДЭТ (10−85%) [6].…”

Section: результаты и их обсуждениеunclassified

“…Курицын лять концентрацией собственных дефектов и изменять условия вхождения примеси в слои за счет использования разнообразных прекурсоров и их соотношений. В качестве источников примеси мышьяка в методе MOCVD применяют арсин и его производные [10][11][12], а в последнее время наибольшее применение находит трис-диметила-миноарсин (ТДМАА, TDMAAs, As[N(CH 3 ) 2 ] 3 ) [6,[13][14][15][16]. Это связано с его невысокой температурой распада (50% при 350 • С [17]), а также низким давлением пара, что обеспечивает лучший контроль уровня легирования.…”

Section: Introductionunclassified

Акцепторное легирование мышьяком при осаждении слоев CdTe из диметилкадмия и диизопропилтеллура

Evstigneev¹,

Чилясов²,

Моисеев³

et al. 2021

Физика И Техника Полупроводников

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The incorporation and activation of arsenic from tris(dimethylamino)arsine in CdTe layers grown by metalorganic chemical vapor deposition with dimethylcadmium and diisopropyltellurium on GaAs substrates are investigated. Arsenic incorporation into CdTe to depend on the crystallographic orientation of the layers and increases in the order (111)B<(100)<(310). Arsenic concentration in the CdTe layers is proportional to the tris(dimethylamino)arsine flow rate to the power of 1.4 and an increase with decrease of the diisopropyltellurium/dimethylcadmium ratio from 1.4 to 0.5. The as-grown CdTe:As layers had p-type conductivity with arsenic and hole concentrations of 1·1017–7·1018 and 2.7·1014–4.6·1015 cm–3, respectively, but the arsenic activation efficiency not exceeding 0.3%. After annealing in argon flow (250–450 ° C) the highest hole concentration and arsenic activation efficiency were 1·1017 cm–3 and ~4.5 % respectively. The ionization energy of arsenic determined from the temperature dependence of the hole concentration was in the range of 98–124 meV. Low-temperature photoluminescence spectra of the layers showed an emission peak with energy of 1.51 eV, which can be attributed to donor-acceptor recombination, where the acceptor is AsTe with ionization energy about 90 meV.

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Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping

Cited by 67 publications

References 46 publications

Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells

Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells

Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non-Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS-1D Software

Акцепторное легирование мышьяком при осаждении слоев CdTe из диметилкадмия и диизопропилтеллура

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