Abstract:The incorporation and activation of arsenic from tris(dimethylamino)arsine in CdTe layers grown by metalorganic chemical vapor deposition with dimethylcadmium and diisopropyltellurium on GaAs substrates are investigated. Arsenic incorporation into CdTe to depend on the crystallographic orientation of the layers and increases in the order (111)B<(100)<(310). Arsenic concentration in the CdTe layers is proportional to the tris(dimethylamino)arsine flow rate to the power of 1.4 and an increase with decrease… Show more
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