Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

García, Héctor; Vinuesa, Guillermo; Ossorio, Óscar G.; Sahelices, Benjamin; Castán, Helena; Dueñas, S.; González, M.B.; Campabadal, F.

doi:10.1016/j.sse.2021.108113

Cited by 8 publications

(11 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This trend is usually related to the thermal energies of oxygen vacancies: as the temperature cools down, a stronger electric field is needed to form or to rupture the conductive filaments because the thermal energies for oxygen vacancies and ions are reduced [12]. In a recent work, we observed, in measurements performed at room temperature, that set and reset transitions, and even intermediate resistance states, could be controlled by the power absorbed by the devices [30]. Figure 6b shows the power absorbed by the devices in the reset transition as a function of the temperature.…”

Section: Resultsmentioning

confidence: 99%

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

et al. 2021

Self Cite

View full text Add to dashboard Cite

In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. After performing an electroforming process at room temperature, the device was cooled in a cryostat to carry out 100 current–voltage cycles at several temperatures ranging from the “liquid nitrogen temperature” to 350 K. The measurements showed a semiconducting behavior in high and low resistance states. In the low resistance state, a hopping conduction mechanism was obtained. The set and reset voltages increased when temperature decreased because the thermal energies for oxygen vacancies and ions were reduced. However, the temperature did not influence the power absorbed in the reset transition, indicating the local temperature in the filament controls the transition. The set transition turned from gradual to abrupt when decreasing the temperature, due to a positive feedback between the current increase and the Joule heating at low temperatures.

show abstract

Section: Resultsmentioning

confidence: 99%

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…Regarding other potential applications of HfO 2 , resistive switching (RS) memory devices [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 ] are of significant importance. RS media based on metal oxides have been of interest for materials scientists and engineers over several decades, dating back to the beginning of 1960-ies [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

“…HfO 2 thin films have been examined as RS media in several studies [ 12 , 13 , 14 , 15 , 16 , 17 ]. At the same time, to improve the RS performance, the effect of doping has also been investigated.…”

Section: Introductionmentioning

confidence: 99%

“…For this reason, the method is of particular importance in the production of electronic devices with 3D integration [ 2 , 3 ]. The HfO 2 thin films have been grown by ALD from different hafnium precursors [ 4 , 5 , 13 , 14 , 15 , 18 , 19 , 28 ] of which HfCl 4 is a carbon-free metal precursor allowing self-limited ALD-type growth in an extremely wide temperature range extending from 225 to 940 °C [ 28 ]. H 2 O has been the most common oxygen precursor applied in ALD of HfO 2 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

et al. 2022

Self Cite

View full text Add to dashboard Cite

Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference films crystallized in the stable monoclinic phase of HfO2. Mixing HfO2 and PrOx resulted in the growth of nanocrystalline metastable tetragonal HfO2. The highest relative permittivities reaching 37–40 were measured for the films with tetragonal structures that were grown using HfO2:PrOx cycle ratio of 5:1 and possessed Pr/(Pr + Hf) atomic ratios of 0.09–0.10. All the HfO2:PrOx films exhibited resistive switching behavior. Lower commutation voltages and current values, promising in terms of reduced power consumption, were achieved for the films grown with HfO2:PrOx cycle ratios of 3:1 and 2:1 and showing Pr/(Pr + Hf) atomic ratios of 0.16–0.23. Differently from the undoped HfO2 films, the Pr-doped films showed low variability of resistance state currents and stable endurance behavior, extending over 104 switching cycles.

show abstract

“…3.8: Montaje experimental para la caracterización eléctrica de los dispositivos mediante la descarga de un condensador. Imagen publicada en [190].…”

Section: Control De Las Transiciones De Set Y Reset Mediante La Desca...unclassified

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Vinuesa¹

View full text Add to dashboard Cite

Como creo que es habitual para todo doctorando, esta tesis ha llegado a su fin gracias a muchas personas que, tanto dentro como fuera de la universidad, han contribuido a mi crecimiento como persona. A todas ellas les agradezco de corazón el camino recorrido juntos:En primer lugar a mis directores de tesis, el Dr. Salvador Dueñas y la Dra. Helena Castán, por su ofrecimiento y disposición a que formase parte de su grupo de investigación y realizase el doctorado con ellos. También debo darles las gracias por su cercanía e incansable amabilidad, siempre están dispuestos a ayudar de cualquiera de las formas. Creo sinceramente que hacen de la Universidad de Valladolid una mejor institución.A mi compañero de laboratorio, Óscar, por su infinita paciencia enseñándome a manejarme en el laboratorio, gracias a él he tenido siempre con quien conversar, y lo más importante, con quien quejarme, la experimentación ha sido siempre mas amena a su lado. Agradezco también al Dr. Héctor García su ayuda en el laboratorio, ya sea en forma de conocimiento o técnicas de experimentación, y al Dr. Benjamín Sahelices su caracter risueño y auxiliador.Si no fuera por la colaboración y comunicación constante con la

show abstract

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

Cited by 8 publications

References 13 publications

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices

Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

Estudio de la conmutación resistiva a partir de la caracterización eléctrica de estructuras MIM

Contact Info

Product

Resources

About