Study of the resistive switching of vertically aligned carbon nanotubes by scanning tunneling microscopy

Агеев, О. А.; Blinov, Yu. F.; Il’in, O. I.; Коноплев, Б. Г.; Rubashkina, M. V.; Smirnov, V. A.; Федотов, А. А.

doi:10.1134/s1063783415040034

Cited by 30 publications

(16 citation statements)

References 15 publications

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“…However, such extraordinary ability has never been proven when studying an RS medium. [28,[158][159][160][161][162][163][164][165] Although STM may provide better lateral resolution than CAFM due to the smaller tip radius and its operation in ultrahigh vacuum, STM presents three important problems limiting its use in RS studies: i) the samples need to show some intrinsic conductivity prior to switching, otherwise it is impossible to measure tunneling current. [157] Reference [157] demonstrated the possibility of switching in a wide spectrum of transition metal oxides using STM.…”

Section: Scalabilitymentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

496

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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Section: Scalabilitymentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

496

434

View full text Add to dashboard Cite

show abstract

“…Ageev et al showed that vertically aligned carbon nanotubes grown on a metallic substrate by plasma enhanced chemical vapour deposition could switch between two conductance states with different voltage pulses [90]. The proposed switching mechanism related to the internal electric field strength of a nanotube caused by a voltage pulse induced instantaneous deformation [91].…”

Section: Scanning Tunneling Microscopy For the Investigation Of Resismentioning

confidence: 99%

Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

et al. 2017

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Correspondence to: yuchaoyang@pku.edu.cn (Y.Y.), y-taka@ist.hokudai.ac.jp (Y.T.), arita@nano.ist.hokudai.ac.jp (M.A.), m.moors@fz-juelich.de (M.M.), a.kenyon@ucl.ac.uk (A.J.K.)Abstract Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effects are induced by ion transport and redox reactions in confined spaces down to nanometre or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a survey for two of the most powerful technologies that are capable of probing the resistance switching mechanisms at the nanoscaletransmission electron microscopy, especially in situ, and scanning tunneling microscopy, for memristive systems based on both electrochemical metallization and valence changes. These studies yield rich information about the size, morphology, composition, chemical state and 2 growth/dissolution dynamics of conducting filaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching.Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device optimization towards practical applications.Resistive Random Access Memories (ReRAMs), or memristors [1], have tremendous potential for applications in nonvolatile embedded or storage class memories [2, 3], as well as in-memory logic that overcomes the von Neumann bottleneck [4]. They are also envisaged to form the basis of power-efficient neuromorphic systems by implementing plasticity similar to that of biological synapses [5]. Consequently, extensive efforts have been devoted to research into this novel class of devices, including studies of switching materials, device structures, scalability, integration, and so on.In particular, it is very important to understand the fundamental operation mechanisms of ReRAM in order to guide device-related studies. It is well known that the resistance switching effects in memristors are usually modulated by ionic transport and subsequent conducting filament formation/dissolution processes occurring at dimensions around 10 nm, and even down to atomic scales [6][7][8], hence elucidating the switching mechanisms requires advanced characterization techniques capable of resolving the nanoscale switching regions formed randomly in the devices.Here we give a survey of two of the most important technologies in understanding the switching mechanisms of ReRAMtransmission electron microscopy (TEM), especially when applied in situ, and scanning tunneling microscopy (STM). We will discuss the principles and designs behind these techniques, and show how they have furthered the understanding of the nature and dynamic evolution of conductive filaments. Finally, the remaining challenges in the understanding of memristive mechanisms w...

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“…Since the discovery of carbon nanotubes (CNTs) [1], their properties, not fully studied, have generated multiple research projects (since 1991 more than 135,000 articles have been published). The discovered unique properties [2][3][4] have shown promise for the use of CNTs as functional elements of emission nanoelectronic devices [5,6], memory elements [7,8], interconnects [9], as solar-driven water evaporation [10,11], generation of electricity [12], solar cells [13] and applications in the field of nanopiezotronics [14]. However, the creation of a broad range of CNTs-based devices requires their production with a given orientation relative to the substrate, sizes, density, properties and their location in areas determined by the device design [15].…”

Section: Introductionmentioning

confidence: 99%

Modeling of Catalytic Centers Formation Processes during Annealing of Multilayer Nanosized Metal Films for Carbon Nanotubes Growth

et al. 2020

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The paper presents a theoretical model of the catalytic centers formation processes during annealing of multilayer nanosized metal films for carbon nanotubes growth. The approach to the description of the model is based on the mass transfer processes under the influence of mechanical thermoelastic stresses, which arise due to the difference in the thermal expansion coefficients of the substrate materials and nanosized metal layers. The thermal stress gradient resulting from annealing creates a drop in the chemical potential over the thickness of the film structure. This leads to the initiation of diffusion mass transfer between the inner and outer surfaces of the films. As a result, the outer surface begins to corrugate and fragment, creating separate islands, which serve as the basis for the catalytic centers formation. Experimental research on the formation of catalytic centers in the structure of Ni/Cr/Si was carried out. It is demonstrated that the proposed model allows to predict the geometric dimensions of the catalytic centers before growing carbon nanotubes. The results can be used to create micro-and nanoelectronics devices based on carbon nanotube arrays.

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Study of the resistive switching of vertically aligned carbon nanotubes by scanning tunneling microscopy

Cited by 30 publications

References 15 publications

Recommended Methods to Study Resistive Switching Devices

Recommended Methods to Study Resistive Switching Devices

Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

Modeling of Catalytic Centers Formation Processes during Annealing of Multilayer Nanosized Metal Films for Carbon Nanotubes Growth

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