Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

Vasin, A. V.; Okholin, Pavel N.; Verovsky, I. N.; Nazarov, A. M.; Lysenko, V. S.; Kholostov, Konstantin; Бондаренко, В. П.; Ishikawa, Yukari

doi:10.1134/s1063782611030249

Cited by 15 publications

(4 citation statements)

References 16 publications

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“…In fact, Si-C like bonds have already been observed in thermally carbonized porous silicon. 21,[39][40][41] Nevertheless, the narrow width of P 1 and P 2 emission bands as well as their very small intensity drop with temperature (see ESI †) are also consistent with radiative recombination of excitons bound to deep defects in SiC. 42 These defects are most likely Si vacancy related point defects in SiC and are well known for their good optical stability.…”

Section: Photoluminescencementioning

confidence: 57%

Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites

et al. 2020

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Section: Photoluminescencementioning

confidence: 57%

Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites

et al. 2020

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“…48 The intensity ratio of the two bands I D /I G is widely used to estimate the degree of disorder and crystallite size in graphitic materials. 49 These two bands have almost the same intensity indicating the presence of high number of defects. As no Raman band can be distinguished from the fluorescent background in the 2500−3000 cm −1 region, the carbon present in the sample can be of two types: (a) amorphous carbon with a low sp 3 content (spectrum similar to the one reported in Ferrari; 50 (b) graphite oxide.…”

Section: ■ Results and Discussionmentioning

confidence: 97%

“…Two bands were observed on the Raman spectra of TCPSi samples (Figure ) at 1351 and 1589 cm –1 that could be assigned to D and G modes characteristic of disordered carbon structures . The intensity ratio of the two bands I D / I G is widely used to estimate the degree of disorder and crystallite size in graphitic materials . These two bands have almost the same intensity indicating the presence of high number of defects.…”

Section: Resultsmentioning

confidence: 99%

Endogenous Stable Radicals for Characterization of Thermally Carbonized Porous Silicon by Solid-State Dynamic Nuclear Polarization ¹³C NMR

et al. 2015

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As with all nanomaterials, characterization of the surface chemistry of mesoporous silicon (PSi) is crucial for the development in its diverse applications. Nuclear magnetic resonance (NMR) is one of the most powerful methods to study the chemistry of nanomaterials, but it is currently underutilized with PSi due to low signal-to-noise ratios achieved with this material which lead to very long measurement times. Here we show that endogenous radicals exist in thermally carbonized PSi and demonstrate the feasibility of solid-state dynamic nuclear polarization (DNP) NMR without addition of organic radicals. Use of DNP NMR is demonstrated to highly improve the signal-to-noise ratio while significantly reducing the measurement times. This technique opens new possibilities for the use of more advanced NMR techniques allowing the detailed characterization of complex materials such as PSi. Furthermore, the chemical structure of thermally carbonized PSi is studied by complementary techniques, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and Raman spectroscopy.

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“…However, thermally oxidized por‐Si is not stable in a humid ambient. Another method of stabilizing the functional properties of por‐Si is the heat treatment in a hydrocarbon atmosphere (carbonization) . It was found that thermally carbonized por‐Si surface is stable in a humid atmosphere as well as in various chemical environments NaOH, HF, KOH, etc.…”

Section: Introductionmentioning

confidence: 99%

EPR Study of Porous Si:C and SiO₂:C Layers

Савченко

Vasin

Muto

et al. 2018

Physica Status Solidi (b)

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Initial porous silicon (por-Si), carbonized porous silicon (por-Si:C), and carbon-incorporated porous silicon oxide (por-SiO 2 :C) layers are studied by electron paramagnetic resonance (EPR) at T ¼ 10-13 K. Scanning transmission electron microscopy and electron energy loss (EEL) spectroscopy show that por-Si:C and por-SiO 2 :C layers have a highly disordered structure with mixing sp 2 and sp 3 C─C bonds. In the por-SiO 2 :C layers, the peak of the oxygen bonded to carbon in the form of hydroxyl groups is found in the EEL spectrum of the C K-edge region. Low-intensity signals of Lorentzian lineshape are detected in the EPR spectrum of por-Si, por-Si:C, por-SiO 2 :C layers. One of them is attributed to the P b0 defect at the Si/SiO 2 interface of nanocrystalline grain and the second to the silicon dangling bonds (SiDB) localized in nanocrystalline Si. The carbonization of por-Si layers and subsequent oxidation of por-Si:C gives rise to the appearance of additional EPR signals of high intensity at g ¼ 2.0035(3) in por-Si:C and at g ¼ 2.0030(3) in por-SiO 2 :C, which are assigned to carbon-related defects (CRD) and carbon clusters, correspondingly. It was found that predominant defect types in por-Si:C and por-SiO 2 :C layers are CRD and carbon clusters, respectively, while the spin concentration of P b0 interface defects and SiDB is low.

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Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

Cited by 15 publications

References 16 publications

Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites

Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites

Endogenous Stable Radicals for Characterization of Thermally Carbonized Porous Silicon by Solid-State Dynamic Nuclear Polarization ¹³C NMR

EPR Study of Porous Si:C and SiO₂:C Layers

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Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

Cited by 15 publications

References 16 publications

Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites

Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites

Endogenous Stable Radicals for Characterization of Thermally Carbonized Porous Silicon by Solid-State Dynamic Nuclear Polarization 13C NMR

EPR Study of Porous Si:C and SiO2:C Layers

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Endogenous Stable Radicals for Characterization of Thermally Carbonized Porous Silicon by Solid-State Dynamic Nuclear Polarization ¹³C NMR

EPR Study of Porous Si:C and SiO₂:C Layers