Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures

The Kinetics of Joined Action of Triplet-Triplet Annihilation and First-Order Decay of Molecules in T1State in the Case of Nondominant First-Order Process: The Kinetic Model in the Case of Spatially Periodic Excitation

“…e example of the setup where the saturation is observed is charge transport in structures like Junction Field-Effect Transistors (JFET) or Metal Semiconductor Field-Effect Transistors (MESFET) [13]. e saturation effect in the electronic structures is observed for drain current for JEFT and MESFET structures [13] and as well for accumulation-mode (AM) -channel siliconon-insulator (SOI) metal-oxide-semiconductor-�els-effecttransistor (MOSFET) or enhancement-mode (EM) -channel SOI MOSFET [14]. e saturation effect in the case of electronic devices is so important that the models of charge transport developed for structures like SOI -type MOSFET [15] or high electron mobility transistors (HEMTs) based on AlGaN/GaN [16] structures have this effect as an necessary condition of correctness of the model.…”

Drain Leakage Current in Δ-channel SOI nMOSFET Operating at High Temperatures

“…The Integrated Circuits (ICs) use at high temperatures, presents countless applications such as industrial, automobiles and aircrafts (1). The application of ICs at high temperatures represents one of the largest problems for bulk MOS technology, mainly due to the excessive elevation of the leakage current in the junctions when the devices are operating at high temperatures (2). Under this aspect, there are reports showing that the SOI (Silicon-on-Insulator) technology comes as an excellent alternative to the bulk MOS (3), due to the significant reduction of the leakage current in the junctions and of the smallest variation of the threshold voltage with the temperature (4).…”

“…The application of ICs at high temperatures represents one of the largest problems for bulk MOS technology, mainly due to the excessive elevation of the leakage current in the junctions when the devices are operating at high temperatures (2). Under this aspect, there are reports showing that the SOI (Silicon-on-Insulator) technology comes as an excellent alternative to the bulk MOS (3), due to the significant reduction of the leakage current in the junctions and of the smallest variation of the threshold voltage with the temperature (4). Then, this is the motivation to investigate, with more details, its functionality and as a consequence, improve Integrated Circuits developing that can operate satisfactory in such harsh environments.…”

Drain Leakage Current in Δ-channel SOI nMOSFET Operating at High Temperatures

“…Use of the Integrated Circuits (ICs), at high temperatures, has shown increasing applications such as in industry, in automobiles and aircrafts [2]. The application of circuits at high temperatures represents one of the largest problems for the bulk MOS, mainly due to the excessive elevation of the leakage current in the junctions when the devices are operating at elevated temperatures [3]. The SOI technology comes as an alternative to the bulk MOS technology [4], due to the junction leakage current reduction and of the smallest variation of the threshold voltage, as the temperature increases [5].…”