Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method

Ke, C. C.; Chiu, C. H.; Li, J. C.; Kuo, Hao‐Chung; Lu, Tien−Chang; Wang, S. C.

doi:10.1016/j.jcrysgro.2010.09.046

Cited by 12 publications

(6 citation statements)

References 14 publications

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“…9,51 However, in the deep UV (200−290 nm), Al(Ga)N materials suffer from extremely low efficiency with regard to photon extraction, due to the reabsorption of emitted photons. 9,52,53 It is well known that the external quantum efficiency (EQE) is dependent on the IQE and extraction efficiency (EE) of photons emitted from the active layer. Thus, Al(Ga)N-based LED devices are practically limited for being deep-UV light sources.…”

Section: ■ Low-energy On-chip Devicesmentioning

confidence: 99%

“…Red and green LEDs based on GaAs and GaP were developed and commercialized in the very early days of LED research . For blue and ultraviolet LEDs, direct-bandgap nitride semiconductors of the Al(Ga)N family are generally selected because they possess relatively high internal quantum efficiency (IQE). , However, in the deep UV (200–290 nm), Al(Ga)N materials suffer from extremely low efficiency with regard to photon extraction, due to the reabsorption of emitted photons. ,, It is well known that the external quantum efficiency (EQE) is dependent on the IQE and extraction efficiency (EE) of photons emitted from the active layer. Thus, Al(Ga)N-based LED devices are practically limited for being deep-UV light sources.…”

Section: Low-energy On-chip Devicesmentioning

confidence: 99%

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Two-Dimensional Hexagonal Boron Nitride for Building Next-Generation Energy-Efficient Devices

Gong

et al. 2021

ACS Energy Lett.

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Advances in the optoelectronics and information industries have allowed modern electronic devices to undergo a continuous trend toward miniaturization and integration, which poses significant challenges to today’s manufacturing technologies. The rise of two-dimensional (2D) atomically crystalline materials offers new possibilities for the design and fabrication of devices at the micro- or nanoscale. Hexagonal boron nitride (hBN) is an important emerging candidate in the family of 2D materials; it holds many intriguing properties of far-reaching significance. Throughout the upsurge in research on 2D materials over the past few decades, 2D hBN has been a versatile platform for various applications. To offer some perspective on the promising attributes of hBN, in this Focus Review we take a snapshot of recent advances in its applications in optoelectronics and photonics, thermal management, batteries, and supercapacitors and provide an outlook on the prospects and remaining challenges for its successful implementation in next-generation energy-efficient devices.

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Section: ■ Low-energy On-chip Devicesmentioning

confidence: 99%

Section: Low-energy On-chip Devicesmentioning

confidence: 99%

Two-Dimensional Hexagonal Boron Nitride for Building Next-Generation Energy-Efficient Devices

Gong

et al. 2021

ACS Energy Lett.

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“…However, the internal quantum efficiency (IQE) of NUV-LEDs is much lower than those of blue and green LEDs [1,6], because the NUV-LEDs have a reduced potential confinement of carriers due to the low indium (In) composition in InGaN quantum wells (QWs) compared with blue and green LEDs. Much research has been performed to improve the IQE of NUV-LEDs by improving crystal quality [7][8][9][10]. However, it is still necessary to investigate means to enhance the IQE for high efficiency NUV-LEDs.…”

Section: Introductionmentioning

confidence: 99%

Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles

Hong¹,

Cho²,

Lee³

et al. 2013

Opt. Express

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We demonstrate localized surface plasmon (LSP)-enhanced nearultraviolet light-emitting diodes (NUV-LEDs) using silver (Ag) and platinum (Pt) nanoparticles (NPs). The optical output power of NUV-LEDs with metal NPs is higher by 20.1% for NUV-LEDs with Ag NPs and 57.9% for NUV-LEDs with Pt NPs at 20 mA than that of NUV-LEDs without metal NPs. The time-resolved photoluminescence (TR-PL) spectra shows that the decay times of NUV-LEDs with Ag and Pt NPs are faster than that of NUV-LEDs without metal NPs. The TR-PL and absorbance spectra of metal NPs indicate that the spontaneous emission rate is increased by resonance coupling between excitons in the multiple quantum wells and LSPs in the metal NPs.

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“…However, when the emission wavelength is adjusted to the green and ultraviolet bands, the emission efficiency of GaN-based LEDs rapidly decreases. There are many reasons for the rapid decline, including immature epitaxial growth and process technology [10][11][12][13][14][15]. The reason why AlGaN-based UV LEDs' technology becomes important is that people see that the application of UV LEDs is of great help to our daily lives.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Light Extraction in Deep Ultraviolet GaN Light Emitting Diodes with Mesh P-Contacts

Kuo

Huang

2020

Applied Sciences

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One of the main reasons that the emission efficiency of GaN-based light-emitting diodes (LEDs) decreases significantly as the emission wavelength shorter than 300 nm is the low light extraction efficiency (LEE). Especially in deep ultra-violet (DUV) LEDs, light propagating outside the escape cone and being reflected back to the semiconductor or substrate layer is absorbed not only by active layers but also by p-type layers with narrower bandgaps and electrodes that are neither transparent nor reflective of the DUV wavelength. In this report, we propose a DUV LED structure with mesh p-GaN/indium-tin-oxide (ITO) contacts and a Ti/Al/Ni/Au layer as a reflective layer to improve LEE. The mesh p-GaN/ITO DUV LED showed an output power of 12% higher than that from the conventional DUV LED due to the lower light absorption at 280 nm.

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Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method

Cited by 12 publications

References 14 publications

Two-Dimensional Hexagonal Boron Nitride for Building Next-Generation Energy-Efficient Devices

Two-Dimensional Hexagonal Boron Nitride for Building Next-Generation Energy-Efficient Devices

Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles

Improvement of Light Extraction in Deep Ultraviolet GaN Light Emitting Diodes with Mesh P-Contacts

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