Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles

Hong, Suk Ki; Cho, Chu‐Young; Lee, Sang-Jun; Yim, Sang‐Youp; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

doi:10.1364/oe.21.003138

Cited by 43 publications

(39 citation statements)

References 20 publications

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“…Owing to the optical response of the Ag nanoparticles strongly depended on the size, shape and density, it is helpful to control the nanostructures via modulating the concentration of the nano-Ag solution with the proper spin coating rate. However, the penetration depth of LSPs evanescent field for Ag was calculated as 41.0 nm for QW-LSPs coupling at an emission wavelength of 406 nm [21], when the real parts of the dielectric constants for GaN and Ag metal were used. In this study, the distance between the Ag nanoparticles and the GaN-based MQWs is too thick to allow the MQW-LSP coupling.…”

Section: Methodsmentioning

confidence: 99%

“…In previous studies of the localized surface-plasmon-enhanced GaN-based LEDs, a metallic nanoparticle layer was embedded in the n-or p-GaN layer of LEDs [19][20][21][22]. It is believed that the coupling of spontaneous emission from InGaN/GaN multiple quantum wells (MQWs) with the localized surface plasmons (LSPs) of metal/dielectric nanostructures can be enhanced light emission by improving the IQE of the device.…”

Section: Introductionmentioning

confidence: 99%

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Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Chuang

Lin

et al. 2015

SPIE Proceedings

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Recently, near-ultraviolet light-emitting diodes (NUV-LEDs) have been used in many applications such as light sources for ultraviolet curing, environmental cleaning, biomedical instrumentation, counterfeit bill detection and phosphor-based white LEDs. However, it is difficult to fabricate NUV-LEDs with high emission efficiency. As the wavelength of NUVLEDs decreases, the most dominant emission will be photons with transverse-magnetic (TM) polarization. For LED structures grown on a c-plane substrate, TM-light propagates mainly in the lateral direction, and it suffers strong effects of total internal reflection (TIR) due to the large incident angle on the interface. Therefore, light extraction efficiency (LEE) of NUV-LEDs is still lower than that of visible LEDs. In this study, a spin coating process in which the grating structure comprises the metallic nanoparticle layer coated on a p-GaN top layer was developed. Various sizes of metallic nanoparticles forming a suspended nanoparticle layer (SNL) embedded in a transparent conductive layer were clearly observed after the deposition of indium tin oxide (ITO). The SNL enhanced the light extraction efficiency of NUVLEDs. Light output power was 1.4 times the magnitude of that of conventional NUV-LEDs operating at 350 mA, but retained nearly the same current-voltage characteristic. Unlike in previous research on surface-plasmon-enhanced LEDs, the metallic nanoparticles were consistently distributed over the surface area. Device performance can be improved substantially by using the three-dimensional distribution of metallic nanoparticles in the SNL, which scatters the propagating light randomly and is coupled between the localized surface plasmon and incident light internally trapped in the LED structure through TIR.Keywords: Surface plasmon, nanoparticle, light-emitting diode (LED), internal quantum efficiency (IQE), external quantum efficiency (EQE), light extraction efficiency (LEE), electroluminescence spectrum, metal-organic chemical vapor deposition (MOCVD), localized surface plasmons (LSPs), transparent conductive layer.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Chuang

Lin

et al. 2015

SPIE Proceedings

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“…Recently, GaN LEDs have a great potential in automotive, medical, and display application including indoor, outdoor lighting, and signals. Nowadays, GaN based near-ultraviolet LEDs (NUV-LEDs) have attracted special attention with regard to pumping sources of white LEDs, photo catalysis, spectrometric detector and biochemical sensors [64,65,66,67]. While the demands for efficient blue GaN LEDs are high, the performance of blue GaN LEDs are seriously weakened by the critical problem of efficiency droop which refers to the reduction in internal quantum efficiency at high current densities [68].…”

Section: Gan Nanostructured Leds Devicesmentioning

confidence: 99%

“…However, the electrically injected mid-and deep-UV lasers based on conventional AlGaN quantum wells (QWs) remain challenging because of valence sub bands crossover, difficult in p-type doping and material epitaxy growth. The requirements regarding the p-(Al)GaN layer are very diverse, including the high hole injection efficiency from the p-layer to the active layer, good electron blocking from the active layer to the p-layer, small bulk electrical resistance, good ohmic contact for the metal, and negligible optical loss [66][67][68][69][70][71][72].…”

Section: Gan Nanostructured Leds Devicesmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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“…[ 18 ] This is too far for plasmonic interaction with the QW. More recently, there have been reports on introducing metallic nanoparticles during growth, [ 18,19 ] or selective etching of p-GaN and subsequent Ag deposition, [20][21][22] however, these methods are either not easily adopted by LED industries or show no signifi cant effect on the spontaneous emission rate.Here, we demonstrate a novel plasmonic platform that exploits the spontaneous formation of hexagonal V-pits at the surface of In-containing GaN. Conventionally, texturing of LED surfaces is used for increasing the light emission, which would otherwise be trapped as waveguide modes and ultimately lost to absorption.…”

mentioning

confidence: 99%

Fast Electrical Modulation in a Plasmonic‐Enhanced, V‐Pit‐Textured, Light‐Emitting Diode

Yang

Bettiol

Shi

et al. 2015

Advanced Optical Materials

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COMMUNICATIONoptical properties of the emitter can be enhanced signifi cantly. Recently, Akselrod et al. [ 12 ] reported a 1000-fold enhancement in the emission rate of a polymer fi lm doped with Ru dye that was sandwiched between a Ag nanocube and fi lm. Yablonovitch and coworkers [ 13 ] predict that the spontaneous emission rate can reach an enhancement of 2500 times with the use of optical antennas with a 10 nm gap, which is faster than stimulated emission. This can bring unprecedented performance to LEDs and has the potential to revolutionize the fi eld of solid-state lighting. To date, most of the examples have been demonstrated in optical systems, with limited success in electrically pumped systems. This is because of the fundamental restriction caused by the near-fi eld nature of plasmonic interaction. [14][15][16] For a blue InGaN LED, the coupling distance between a silver plasmon resonator and the quantum well (QW) needs to be less than 42 nm. [ 17 ] A large Purcell factor of 92 was obtained when an InGaN emitter was placed 12 nm from a Ag fi lm. [ 15 ] However, the hole injection layer or p-GaN layer, which is sandwiched between the InGaN QWs and plasmonic metal layer, needs to be ca. 200 nm in order to achieve suffi cient carrier mobility and effi ciency. [ 18 ] This is too far for plasmonic interaction with the QW. More recently, there have been reports on introducing metallic nanoparticles during growth, [ 18,19 ] or selective etching of p-GaN and subsequent Ag deposition, [20][21][22] however, these methods are either not easily adopted by LED industries or show no signifi cant effect on the spontaneous emission rate.Here, we demonstrate a novel plasmonic platform that exploits the spontaneous formation of hexagonal V-pits at the surface of In-containing GaN. Conventionally, texturing of LED surfaces is used for increasing the light emission, which would otherwise be trapped as waveguide modes and ultimately lost to absorption. [ 23,24 ] By depositing a plasmonic metal fi lm on top of a heavily textured V-pit surface, we show that the carrier recombination rate can also be increased at distances larger than the surface plasmon (SP) fringing fi eld. The presence of a fl at metal fi lm or even a corrugated one has already been shown to modify the emission rates over large distances. [ 25,26 ] The main difference is that a textured metal surface can provide the missing momentum for photons to couple directly to SPs and vice versa, which is not possible for a fl at metal surface. This allows photons to access the high-density SP states at the V-pits, creating an additional recombination pathway. This relaxes the stringent requirement that normally holds for energy transfer between QWs and SPs. Since the V-pits are obtained from the growth process, our method can be easily adopted for largescale industrial fabrication of ultrafast LEDs.V-pits are common defects that occur during the epitaxial growth of InGaN/GaN layers and LED structures. They originate from threading dislocations (TDs) that are formed ...

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Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles

Cited by 43 publications

References 20 publications

Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Improved UV LED performance using transparent conductive films embedded with plasmonic structures

Review of GaN Nanostructured Based Devices

Fast Electrical Modulation in a Plasmonic‐Enhanced, V‐Pit‐Textured, Light‐Emitting Diode

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