Study of the epitaxial growth of CeO2(001) on yttria-stabilized zirconia/Si(001)

Trtik, V.; Aguiar, R.; Sánchez, F.; Ferrater, C.; Várela, M.

doi:10.1016/s0022-0248(98)00445-x

Cited by 26 publications

(13 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…10 However, it appears not to be possible to obtain the (100) orientation of CeO 2 films by a direct deposition on Si(100). 16 For this reason different buffer layers between the Si(100) substrate and the CeO 2 layer have been studied, e.g. yttria-stabilized ZrO 2 (YSZ), 9,16,22,[50][51][52][53][54] SrTiO 3 (STO) 9,22 and MgO.…”

Section: Discussionmentioning

confidence: 99%

“…12 Cerium dioxide thin films have been deposited by many different techniques. Physical methods include electron beam evaporation (EBE), 13 sputtering, 14 laser ablation [15][16][17] and molecular beam epitaxy (MBE). 18 Several chemical methods have been applied as well, among them sol-gel techniques, 19 catalyst-enhanced chemical vapour deposition (CECVD), 20 metalorganic CVD (MOCVD), [21][22][23][24] aerosol-assisted CVD, 25 plasma-enhanced CVD (PECVD) 26 and atomic layer deposition (ALD).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Cerium dioxide buffer layers at low temperature by atomic layer deposition

2002

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Cerium dioxide buffer layers at low temperature by atomic layer deposition

2002

View full text Add to dashboard Cite

“…Particularly, it has been reported that the high energy of PLD flux can be rechanneled into enhanced surface diffusion for growing smooth thin films . Note that the room‐temperature epitaxial growth of crystalline oxides, such as CeO 2 , has been reported previously by PLD and electron beam evaporation. Additionally, there is an indication that the outward diffusion of oxygen ions from the STO substrate, as discussed in the following, may also play an active role for the epitaxial growth of GAO at room temperature.…”

mentioning

confidence: 99%

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

et al. 2013

View full text Add to dashboard Cite

Transition-metal-oxide materials and their interfaces have played a dominant role in ionic-based solid state electrochemical devices for energy conversion and storage, for example, as the heart of solid oxide fuel cells, [1] gas sensors, and logic devices of electroresistive memories. [2] Complementing these applications in solid state ionics, in recent years there has been rapid progress in exploring oxide interfaces for electronics. [3][4][5][6][7][8] In particular, the progress in atomic scale control of complex oxide film growth has resulted in the discoveries of a quasi-two-dimensional electron gas (q2DEG) at the heterointerface between two band-gap insulators of perovskite LaAlO 3 (LAO) and SrTiO 3 (STO), [7] and more recently, a 2DEG with extremely high carrier mobilities, exceeding 100,000 cm 2 V -1 s -1 at 2 K, at a epitaxial spinel/perovskite interface between gamma-alumina (γ-Al 2 O 3 , GAO) and STO (GAO/STO). [8] In reminiscent of the realization of high-mobility 2DEGs at epitaxially grown interfaces made of traditional semiconductors, which has led to a wealth of new physical phenomena as well as 2 new electronic and photonic devices over the past few decades, oxide 2DEGs provide opportunities for a new generation of all-oxide electronic devices. [3][4][5][6] On the one hand, like semiconductors, most complex oxides are closely lattice-matched to one another and lead themselves to epitaxial growth. On the other hand, the electrons with partially occupied d-orbitals in transitional metal oxides exhibit stronger correlations to other electrons and the lattice. This can give rise to a variety of extraordinary physical phenomena and functionalities at oxide interfaces well beyond those exhibited by conventional semiconductor interfaces, such as 2DEGs with superconductivity or magnetism. [9,10] Up to date, high mobility oxide 2DEGs are almost exclusively fabricated at temperatures higher than 600 ºC. [3][4][5][6][7][8][9][10][11][12][13] It has become evident that the high-temperature fabrication procedure, firstly, results in strong cation intermixing/diffusion across the interface, [11] which most likely has a deleterious effect on carrier mobilities. For example, the electron mobility of the intensively investigated LAO/STO (deposited at 600-850 ºC) is typically 1000 cm 2 V -1 s -1 at 2 K. [3][4][5][6][7][8][9][10][11][12][13] Similarly, for the high-mobility GAO/STO (deposited at 600 ºC) with film thicker than 3 unit cells (uc), where cation intermixing become unambiguous, the mobility also falls to around 1000 cm 2 V -1 s -1 at 2 K. [8] Secondly, at high temperatures, the oxygen ions in STO can diffuse over many micrometers in minutes. [14] For STObased heterostructures where oxygen vacancies dominate the interface conduction, such as for the GAO/STO heterostructure, [8] the high temperature process can further level out any nanometer-scale steps in the electron concentration profile along lateral directions, although there can be strong spatial confinement vertically. Even for the LAO/STO system, w...

show abstract

“…Crystallization of Ce0 2 in the magnetic field was also observed even at room temperature deposition. So far, deposition of Ce0 2 at room temperature was reported by several authors [18][19][20][21]. However, to crystallize Ce0 2 , post deposition annealing at 800-1000 'C was needed [18][19][20].…”

Section: Methodsmentioning

confidence: 99%

“…So far, deposition of Ce0 2 at room temperature was reported by several authors [18][19][20][21]. However, to crystallize Ce0 2 , post deposition annealing at 800-1000 'C was needed [18][19][20].…”

Section: Methodsmentioning

confidence: 99%

The effect of SrTiO3 seed and application of in-situ magnetic field on the preparation of Pb(Zr, Ti)O3 thin film by pulsed laser deposition

Wakiya¹,

Nagamune²,

Moon³

et al. 2007

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

Pb(Zr,Ti)0 3 thin film was prepared on SrTi0 3 /Pt/Ce0 2 /Si0 2 /Si substrate by pulsed laser deposition with in-situ magnetic field (Dynamic Aurora PLD method). SrTi0 3 and Ce0 2 layers were also prepared by this method, and Pt layer (bottom electrode was prepared by rf magnetron sputtering). Dynamic Aurora PLD method enabled to lower crystallization temperature for Ce0 2 (below 300 'C, even at room temperature), SrTi0 3 (400 'C) as well as PZT (400 'C). Ce0 2 layer was used to improve the crystallinity ofPt bottom electrode. SrTi0 3 layer was used as a seed layer to help the crystallization of PZT. In case of Ce02, amorphous film was obtained without application of magnetic field. This indicates that application of magnetic field has the key to lower the crystallization temperature. Under 2000 G of magnetic field, clear Ce0 2 (111) peak was observed. For SrTi0 3 , it was also found that the crystallinity of SrTi0 3 changes with the atmosphere during deposition; the crystallinity is not necessarily high in 0 2 atmosphere and the crystallinity was high in N20 atmosphere. Similar effect was also observed on the preparation of PZT thin film. Since it is known that N 2 0 decomposes into N2 and atomic oxygen, and the atomic oxygen is very active. Therefore, application of magnetic field in the N 2 0 atmosphere would enhance the formation of atomic oxygen to lower crystallization temperature of SrTi0 3 and PZT thin films.

show abstract

Study of the epitaxial growth of CeO2(001) on yttria-stabilized zirconia/Si(001)

Cited by 26 publications

References 28 publications

Cerium dioxide buffer layers at low temperature by atomic layer deposition

Cerium dioxide buffer layers at low temperature by atomic layer deposition

Room Temperature Formation of High‐Mobility Two‐Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

The effect of SrTiO3 seed and application of in-situ magnetic field on the preparation of Pb(Zr, Ti)O3 thin film by pulsed laser deposition

Contact Info

Product

Resources

About