Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

“…We have chosen two-dimensional hydrodynamical mathematical model, that often is used in many industrial simulation systems [5,6], which, combining with the original physical models of the behavior of electrons in dielectrics and semiconductors, gave the good results. The same approaches are described in many workings [7][8][9].…”