Study of the dielectric constant of polyurethane/polybutyl-methacrylate interpenetrating polymer networks using metal-insulator-semiconductor structure

Abstract

Polyurethane/polybutyl-methacrylate interpenetrating polymer networks (IPNs) film was formed on n-Si substrate by the dropping technique. When aluminum (Al) was vacuum deposited on the top of the film, the Al/IPNs/n-Si (metal-insulatorsemiconductor) structure was fabricated successfully. With the aid of the high-frequency capacitance-voltage (C-V) characteristics at room temperature, the dielectric constant of IPNs was obtained. In the C-V curves, an increased hysteresis at high sweep voltage and a plateau in the depletion region were observed. This plateau indicates that the unsaturated bonds beyond IPNs film could act as electron well at the applied voltage above 10 V.