Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation

Abstract

a b s t r a c tCdSe polycrystalline films were deposited by a close-spaced vacuum sublimation method at different substrate temperatures (T s ) using glass slides as substrates. At T s r 673 K the films have a structure with strong dispersion of grain size (d) (from 0.1 to 0.3 μm). In this case the layer-by-layer mechanism determines the growth process of the layers. For ) is considerably smaller than for the films deposited at Т s ¼773 K (4.0 Â 10 À 3 ). Increase of the value of T s improves the stoichiometry of CdSe films. Analysis of the low-temperature photoluminescence (PL) spectra let us determine the nature and energy of point and extended defects in the investigated films. It was shown that the films contain Na(Li) and P residual impurities. The results of the structural and PL measurements showed that the CdSe polycrystalline films are of fairly good crystal and optical quality for T s ¼ 873 K and can be suitable for various applications.

Influence of deposition conditions on morphological, structural, optical and electro-physical properties of ZnSe films obtained by close-spaced vacuum sublimation

“…The XRD analysis was also used to determine the coherent scattering domain (CSD) size and micro-stress level ε of the ZnSe films. To separate the pure and instrumental contributions of the diffraction line broadening profiles the Cauchy, Gauss approximation and threefold convolution [18] were used.…”

Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation

“…The low-temperature PL measurements [50][51][52] let us determine the nature and energy levels of both the intrinsic defects and the residual impurities as well as the relative concentration of dislocations in semiconductor materials [53,54]. In this case, the excitonic PL lines are very sensitive to various defects in semiconductors.…”

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

“…The low-temperature PL measurements provide powerful tools for the investigation of defect structure in different semiconductor materials [20,32,33]. This makes it possible to determine the nature and energy levels of both the intrinsic defects and the residual impurities as well as the relative concentration of dislocations in semiconductor materials [34,35].…”

“…Low temperature photoluminescence (PL) measurement is a very effective method for studying the defect's structure of various semiconductor polycrystalline films and their band structure [11,[17][18][19][20]. At present, the PL spectra of bulk semiconductor crystals are studied well enough [21][22][23][24], but thin and thick films of these materials have not been thoroughly investigated.…”