Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Hu, Shiben; Lu, Kuankuan; Ning, Honglong; Yao, Rihui; Gong, Yanfen; Pan, Zhangxu; Guo, Chunhe; Wang, Jiantai; Pang, Chao; Gong, Zheng; Peng, Junbiao

doi:10.3390/nano11020522

Cited by 11 publications

(8 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When the pulse width of the laser is large enough relative to the lifetime, the peak is proportional to the lifetime. Therefore, for the evaluation of deep level traps, μ-PCD uses peak values that can be measured quickly and accurately, rather than using the lifetime value of rapid decay [ 24 ]. So, the two characteristic parameters obtained by analyzing the μ-PCD decay curve are the peak value and τ 2 , where the peak value represents the number of carriers and τ 2 is related to film uniformity.…”

Section: Resultsmentioning

confidence: 99%

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Zhang

et al. 2021

Membranes

Self Cite

View full text Add to dashboard Cite

High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh rate and high-resolution panel display technology. In this work, using rare earth dopant, neodymium-doped indium-zinc-oxide (NdIZO) film was optimized as the active layer of TFT with Cu source and drain (S/D) electrodes. Under the guidance of the Taguchi orthogonal design method from Minitab software, the semiconductor characteristics were evaluated by microwave photoconductivity decay (μ-PCD) measurement. The results show that moderate oxygen concentration (~5%), low sputtering pressure (≤5 mTorr) and annealing temperature (≤300 °C) are conducive to reducing the shallow localized states of NdIZO film. The optimized annealing temperature of this device configuration is as low as 250 °C, and the contact resistance (RC) is modulated by gate voltage (VG) instead of a constant value when annealed at 300 °C. It is believed that the adjustable RC with VG is the key to keeping both high mobility and compensation of the threshold voltage (Vth). The optimal device performance was obtained at 250 °C with an Ion/Ioff ratio of 2.89 × 107, a saturation mobility (μsat) of 24.48 cm2/(V·s) and Vth of 2.32 V.

show abstract

Section: Resultsmentioning

confidence: 99%

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Zhang

et al. 2021

Membranes

Self Cite

View full text Add to dashboard Cite

show abstract

“…Here, we have measured the SS value by taking the inverse of the slope fitted linearly from the log-linear I ds -V gs characteristic curve [65]. The theoretical limit for the SS value of a conventional device at room temperature (300 K) is at 0.06 V/decade [66,67]. The subthreshold swing (SS) measured for the graphene-doped β-Ga 2 O 3 TFTs is ∼0.135 V/decade compared to the pristine β-Ga 2 O 3 TFTs at ∼0.189 V/decade.…”

Section: Effects Of the Graphene Doping For The β-Ga 2 O 3 Tft Devicesmentioning

confidence: 99%

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

Feria,

Huang,

Yeh

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizing β-Ga2O3 via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in X-ray diffraction (XRD) patterns and full surface coverage formation in scanning electron microscopy (SEM) images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesized β-Ga2O3 was fabricated as thin film transistors (TFT). The β-Ga2O3 TFT fabricated exhibits remarkable electron mobility (1.28 cm2/Vs) and a good current ratio (Ion/Ioff) of 2.06×105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene in β-Ga2O3 TFT devices, increasing the electrical device mobility by ~8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that the β-Ga2O3 networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.

show abstract

“…One of the effective routines for realizing TFTs with good performance is the deposition of OS channel layers with high resistivity, followed by a postdeposition annealing treatment. Annealing is one of the most commonly used methods for optimizing active channel layers because of its effectiveness in alleviating deep traps formed by ion bombardment or unintended defects during film deposition or the synthesis process [28]. Most previous studies demonstrated that the performance of TFTs under multiple annealing conditions varies depending on the channel material and process conditions chosen [29,30].…”

Section: Introductionmentioning

confidence: 99%

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

Xiao

Yuvaraja

Chettri

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Indium oxide (In2O3) thin films sputtered at room temperature were annealed under different atmospheres and examined for thin-film transistor (TFT) active channel applications. The annealing process was performed in a rapid thermal annealing system at 350 °C under O2, Ar, forming gas (FG, 96% N2/4% H2), and N2. It was found that the annealed In2O3 TFTs exhibited high field-effect mobility (μFE >40 cm2V−1s−1), high on/off current ratio (Ion/off ~108), and controlled threshold voltage (VTH) for the enhancement- and depletion-mode operations. Note that the annealing atmosphere has a significant effect on the electrical performance of the In2O3 TFTs by inducing changes in oxygen-related species, particularly oxygen vacancies (VO) and hydroxyl/carbonate species (O–H/C–O). For the O2-, Ar-, FG-, and N2-annealed TFTs, μFE was in increasing order accompanied by a negative shift in VTH, which is a result attributed to the larger VO in the In2O3 thin films. Furthermore, the ΔVTH of the FG-, and N2-annealed TFTs in a positive bias stress (PBS) test was greater than that of the O2-, Ar-annealed devices, attributing to their lower density of O–H/C–O groups in the In2O3 thin films. Our results suggest that the annealing atmosphere contributes to the internal modifications of the In2O3structure and in turn altered the electrical characteristics of TFTs. These annealed In2O3 TFTs with high performance are promising candidates for realizing large-area, transparent, and high-resolution displays.

show abstract

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Cited by 11 publications

References 19 publications

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

Contact Info

Product

Resources

About

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Cited by 11 publications

References 19 publications

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

Contact Info

Product

Resources

About

Facile synthesis of β-Ga₂O₃ based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides