Study of the activation of nonevaporable getters

Abstract

X-ray photoelectron spectroscopy and static secondary ion mass spectroscopy study of activation mechanism of Zr-V low activation temperature nonevaporable getter films

Ba Deposition and Oxidation on θ-Al2O3/NiAl(100) Ultrathin Films. Part II: O2(g) Assisted Ba Oxidation

“…In other words, the BE difference for the Ba 4d levels between the first and the last deposition steps is -0.7 eV. Based on previous theoretical and experimental studies on the BE shifts of Ba in its metallic and oxidized forms, 12,[18][19][20][21][22][23][24][25] we attribute this monotonic decrease in BE observed during the Ba deposition on the θ-Al 2 O 3 /NiAl(100) substrate using preparation method A to the complete oxidation of the Ba layer and the formation of BaO. The Al 2p levels of the θ-Al 2 O 3 /NiAl(100) substrate also reveal significant changes during the Ba deposition/oxidation in preparation method A.…”

Hydrogen Sorption Property of Zr<SUB>55</SUB>V<SUB>29</SUB>Fe<SUB>16</SUB> Nanopowder Synthesized by the Plasma Arc Discharge Process

“…10,22) Thus, the formation of the mixed-phase structure of the zirconium solid solution and intermetallic compound is very important for preparing the zirconiumbased getter. The synthesized Zr 55 V 29 Fe 16 powder by the plasma arc discharge process in this study has a mixed-phase structure of the Zr, ZrH 2 , FeV and Zr(V 1-x Fe x ) 2 phases as shown in Fig.…”

“…Generally, the conventionally prepared Zr-V-Fe-based getter material, Zr 57 V 36 Fe 7 , has a mixed phase structure of -Zr and Zr(V 1-x Fe x ) 2 phases. 10,22) The Zr(V 1-x Fe x ) 2 phase was formed by the addition of Fe to ZrV 2 . For the application of the Zr-V-Fe-based alloys as a getter in vacuum technology, a high gas sorption property and a low activation temperature are needed.…”

Development of thin film getters suitable for field-emission display in high vacuum systems

“…In order to activate a getter, it is necessary to work at high temperature [2][3][4][5] and the activation process at high temperature and outgassing damages the devices. Extensive efforts have been made with respect to nonevaporable getters, especially by using Zr or Zr alloy.…”