1991
DOI: 10.1116/1.585376
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Study of temperature dependent structural changes in molecular-beam epitaxy grown Hg1−xCdxTe by x-ray lattice parameter measurements and extended x-ray absorption fine structure

Abstract: Infrared detectors fabricated from Hg1−xCdxTe typically operate in the 60 to 160 K range. The temperature dependence of the atomic structure of HgCdTe may influence device performance. We present the first detailed study of the x-ray diffraction lattice parameters of molecular-beam epitaxy grown Hg1−xCdxTe epilayers between 15 and 300 K. The epilayers were grown on (100) oriented CdTe substrates, and varied in thickness (6 to 11-μm) and composition (x=0–0.172). The (400) reflection was measured to determine th… Show more

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Cited by 3 publications
(10 citation statements)
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“…In a subsequent review, Capper [23] reports a(x ) = 6.4614 + 0.0084x + 0.0168x 2 − 0.0057x 3 Å (8.16) as the expression for the variation of lattice parameter, a, with the composition, x , which was proposed by Higgins et al [3]; and points out that the differences with Brice's near-stoichiometric case and that of Woolley and Ray [24] amount to ±0.001Å or less. Additional data for bulk material [5,[25][26][27], as well as for molecular beam epitaxy (MBE) [28,29,33], liquid phase epitaxy (LPE) [30][31][32]35], and metal-organic vapor phase epitaxy (MOVPE) [36] material are also shown in Figure 8.3, which are in general agreement with each other and with Equation 8.16. In contrast, earlier MOVPE growth of HgTe layers on CdTe by Bhat et al [38] resulted in lattice parameters of 6.454-6.456Å at 1.0-3.5 μm film thickness.…”
Section: Variation Of Lattice Parameter With Xsupporting
confidence: 72%
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“…In a subsequent review, Capper [23] reports a(x ) = 6.4614 + 0.0084x + 0.0168x 2 − 0.0057x 3 Å (8.16) as the expression for the variation of lattice parameter, a, with the composition, x , which was proposed by Higgins et al [3]; and points out that the differences with Brice's near-stoichiometric case and that of Woolley and Ray [24] amount to ±0.001Å or less. Additional data for bulk material [5,[25][26][27], as well as for molecular beam epitaxy (MBE) [28,29,33], liquid phase epitaxy (LPE) [30][31][32]35], and metal-organic vapor phase epitaxy (MOVPE) [36] material are also shown in Figure 8.3, which are in general agreement with each other and with Equation 8.16. In contrast, earlier MOVPE growth of HgTe layers on CdTe by Bhat et al [38] resulted in lattice parameters of 6.454-6.456Å at 1.0-3.5 μm film thickness.…”
Section: Variation Of Lattice Parameter With Xsupporting
confidence: 72%
“…This relationship is shown in Figure 8.4 (for x = 0, x = 0.5, x = 1.0) alongside other reports found in the literature. [48] Lattice parameter (Å) Temperature (K) Reasonable agreement is found with early [47][48][49] and more recent [28,50,51] reports on bulk and MBE material, respectively. Nevertheless, it is evident from Figure 8 [48], which show trends of increasing lattice parameter with decreasing temperature for temperatures below about 50 K. As the thermal expansion coefficient has been observed to be negative below about 80 K [10], such lattice expansion is to be expected for low temperatures.…”
Section: Variation With Temperaturesupporting
confidence: 56%
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