Transient behavior of Hg1−xCdxTe films deposited on (100) CdTe substrates by chemical vapor transport

Wiedemeier, H.; Ge, Y. R.

doi:10.1007/bf02659906

Cited by 6 publications

(12 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The analysis of previous studies of Hg 1-x Cd x Te epitaxial growth on singular (100) oriented CdTe substrates by chemical vapor transport (CVT) 1 suggests that the transient surface morphology development is consistent with the Stranski-Krastanov (SK) mode. 2 The experimental results 1 also reveal the time dependence of the evolution of the surface morphology, of the growth rate, and of the growth surface composition.…”

Section: Introductionmentioning

confidence: 84%

“…2 The experimental results 1 also reveal the time dependence of the evolution of the surface morphology, of the growth rate, and of the growth surface composition. 1 The Hg 1-x Cd x Te films grown on the (100) CdTe substrates show rather flat and smooth surfaces after a growth time of about 1 h under the growth conditions used. 1 The occasional growth of prolonged (tall) islands, observed for this epitaxial growth system under the same 1 vapor transport conditions, does not show the same transient growth behavior, 3 the island morphology is maintained even after a growth time of a few hours.…”

Section: Introductionmentioning

confidence: 96%

“…1 The Hg 1-x Cd x Te films grown on the (100) CdTe substrates show rather flat and smooth surfaces after a growth time of about 1 h under the growth conditions used. 1 The occasional growth of prolonged (tall) islands, observed for this epitaxial growth system under the same 1 vapor transport conditions, does not show the same transient growth behavior, 3 the island morphology is maintained even after a growth time of a few hours. These results indicate that the growth morphology, the growth rate, and the growth composition of the hetero-epitaxy are not only determined by the vapor transport properties, but also affected by the growth surface properties and related growth kinetic limitations.…”

Section: Introductionmentioning

confidence: 96%

See 2 more Smart Citations

Transient behavior of Hg1−xCdxTe film growth on 3° off-(100) CdTe substrates by chemical vapor transport

Wiedemeier

1998

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 96%

See 1 more Smart Citation

Transient behavior of Hg1−xCdxTe film growth on 3° off-(100) CdTe substrates by chemical vapor transport

Wiedemeier

1998

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

“…They are the common sources for the delayed response during thin-film deposition on metallic alloys, exemplified by growth of mercury cadmium telluride (Hg 1-x Cd x Te) on the (100) CdTe substrate via metalorganic chemical vapor deposition (Wiedemeier and Ge, 1996;Dutton et al, 1993). They are the common sources for the delayed response during thin-film deposition on metallic alloys, exemplified by growth of mercury cadmium telluride (Hg 1-x Cd x Te) on the (100) CdTe substrate via metalorganic chemical vapor deposition (Wiedemeier and Ge, 1996;Dutton et al, 1993).…”

Section: Thermal Oxidation Of Siliconmentioning

confidence: 99%

“…They are the common sources for the delayed response during thin-film deposition on metallic alloys, exemplified by growth of mercury cadmium telluride (Hg 1-x Cd x Te) on the (100) CdTe substrate via metalorganic chemical vapor deposition (Wiedemeier and Ge, 1996;Dutton et al, 1993). Figure 9.5 compares the experimental result by Wiedemeier and Ge (1996) and the dualphase-lag model for the growth history of the Hg 1-x Cd x Te layer. Phase lag of the density gradient (τ ρ ) refers to the time required for effective diffusion of the chemical vapor into the substrate, whereas phase lag of the mass flux vector (τ j ) reflects the time required for completing the chemical reaction in the formation of the Hg 1-x Cd x Te compound.…”

Section: Thermal Oxidation Of Siliconmentioning

confidence: 99%

Lagging Behavior in other Transport Processes

Tzou¹

2014

Macro‐ to Microscale Heat Transfer

View full text Add to dashboard Cite

Lagging behavior is not a prerogative of heat transport during the ultrafast transient. For the transport processes involving microstructural interactions such as mass interdiffusion of different species, chemical reactions, and thermoelectrical coupling, the lagging behavior is expected as well, in times comparable to the characteristic times describing the microstructural interaction effects. This chapter extends the same phase-lag concept in Fourier's law to Fick's law for mass diffusion. Experimental results for the thin-film growth of silicon dioxide and the time evolution of intermetallic compound layers for a wide variety of electronic materials are examined to identify the sources of lagging. Threshold values for the phase lag of the density gradient and phase lag of the mass flux vector are determined from the experimental curves, which are now in hours and days. Coupling between thermal and electrical fields follows, with emphasis on extracting the lagging behavior during the ultrafast transient across the mushy zone. Resemblance between the dual-phase-lag heat-transfer model and viscoelasticity/viscoelastic fluids, as well as its perfect correlations to the transient response in nanofluids are derived. Regardless of different sources for the delayed responses, therefore, the lagging behavior seems to be common during the ultrafast transient in different fields.Lagging response results from the finite times required to turn a cause into an effect. Such finite times are characterized by the two phase lags, τ T and τ q , in the dual-phase-lag model, where heat flux and temperature gradient can be either the cause or the effect in heat flow. The resulting delayed response intrinsically alters the nature of heat transport, in times comparable to the phase lags. Beyond the scope of microscale heat transfer, the delayed response between the cause and effect should be a general concern for transient processes in other disciplines in engineering and science. It may not have been evident in the past because the process time may be much longer than the phase lags characterizing the delayed response. As the response time continuously shortens into the pico/femtosecond domain and the physical scale shrinks into the region of nanometers, however, the lagging behavior may need to be re-evaluated in examining what we have studied before.This chapter is dedicated to the lagging behavior in mass transport. Experimental results for the thin-film growth of silicon dioxide and growth of intermetallic compound layers in solder

show abstract

Transient behavior of Hg1−xCdxTe films deposited on (100) CdTe substrates by chemical vapor transport

Cited by 6 publications

References 14 publications

Transient behavior of Hg1−xCdxTe film growth on 3° off-(100) CdTe substrates by chemical vapor transport

Transient behavior of Hg1−xCdxTe film growth on 3° off-(100) CdTe substrates by chemical vapor transport

Lagging Behavior in other Transport Processes

Transient behavior of Hg1−xCdxTe film growth on (111)B CdTe substrates by chemical vapor transport

Contact Info

Product

Resources

About