Study of surface field in n-type GaAs before and after surface doping with H2

Kassel, L.; Garland, J. W.; Raccah, P. M.; Coluzza, C.; Neglia, A.; Carlo, Aldo Di

doi:10.1016/0169-4332(92)90256-w

Cited by 6 publications

(1 citation statement)

References 10 publications

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“…On the experimental side, no clear evidence of the H-level location in the energy gap of GaAs has yet been found: electroreflectance measurements in highly doped, bulk n-type material point out a shallow level ("-25 meV) [6]. On the other hand, hydrogen incorporation in p-type GaAs and in,Ga,-,AsiGaAs muitiple quantum wells (MQW) has been shown to give rise to photoluminescence (PL) bands deep in the gap, which are due to internal transitions in hydrogenMa vacancy complexes [7-91. incorporation gives rise to an additional, shallow PL band in MQW structnres 19-1 I].…”

Section: Introductionmentioning

confidence: 99%

Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity

Capizzi¹,

Polimeni²,

Bonanni³

et al. 1994

Semicond. Sci. Technol.

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Low-temperature photoluminescence in InGaAsiGaAs strained quantum wells shows the appearance, upon deuterium irradiation, of two bands at energies below the heavy-hole free exciton. The deeper band is due to recombination at a deuterium impurity (or at a deuterium-defect complex), while the shallower band is attributed to an exciton bound to the deuterium-related state. The binding energies of these !WO bands depend on ?!joy Composition and we!! width and show a maximum for finite well width values as expected by theoretical calculations. The absence of these bands in samples irradiated with helium shows that the two bands are related to deuterium atoms in the samples rather than to recombination centres due to the irradiation procedure. Thermal annealing treatments indicate that the dissociation energy of the deuterium-related radiative state is comparable to that measured in G a b for complexes formed by deuterium and deep traps. 2233 i,.,oi.e coii.".er,cioi,d impui-,.Ues (a f e w iesulis exisi foi. =f r h e n hqnA nn :-orliiri-n

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Section: Introductionmentioning

confidence: 99%

Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity

Capizzi¹,

Polimeni²,

Bonanni³

et al. 1994

Semicond. Sci. Technol.

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Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

Capizzi

Coluzza

Emiliani

et al. 1992

Journal of Applied Physics

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The spectrum of energy levels of the Ga-vacancy/deuterium complexes in p-GaAs

Bonapasta

Bonanni

Capizzi

et al. 1993

Journal of Applied Physics

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Energy levels of the complexes formed by Ga vacancies binding one or more deuterium (or hydrogen) atoms are investigated by low-temperature photoluminescence. Since the as-grown, nondeuterated material is unintentionally doped p type, the emission is possible because of ‘‘internal’’ recombination from a D donor in an adjacent bond-center position and the ground levels of the different possible vacancy configurations, with zero, one, or more D atoms trapped in its dangling bonds. At 2 K, the transitions occur at 1.14, 1.19–1.22, 1.33–1.30, and 1.34 eV, and the last two have never been observed before. The given energy ranges correspond to laser excitation increasing from the lowest to highest level, for a given D treatment of the material. We explain the new transitions and the multiplet character of some of the bands in terms of the possible different ways of accommodating the D atoms inside the vacancy. The level separation in our data is less than that predicted theoretically for the ‘‘bare’’ vacancy with a fully unrelaxed lattice.

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Study of surface field in n-type GaAs before and after surface doping with H2

Cited by 6 publications

References 10 publications

Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity

Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity

Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

The spectrum of energy levels of the Ga-vacancy/deuterium complexes in p-GaAs

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