Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity

Abstract

Low-temperature photoluminescence in InGaAsiGaAs strained quantum wells shows the appearance, upon deuterium irradiation, of two bands at energies below the heavy-hole free exciton. The deeper band is due to recombination at a deuterium impurity (or at a deuterium-defect complex), while the shallower band is attributed to an exciton bound to the deuterium-related state. The binding energies of these !WO bands depend on ?!joy Composition and we!! width and show a maximum for finite well width values as expected by theoretical calculations. The absence of these bands in samples irradiated with helium shows that the two bands are related to deuterium atoms in the samples rather than to recombination centres due to the irradiation procedure. Thermal annealing treatments indicate that the dissociation energy of the deuterium-related radiative state is comparable to that measured in G a b for complexes formed by deuterium and deep traps. 2233 i,.,oi.e coii.".er,cioi,d impui-,.Ues (a f e w iesulis exisi foi. =f r h e n hqnA nn :-orliiri-n

Degradation of InGaAs pin photodiodes by neutron irradiation

“…In In 1−x Ga x As y P 1−y /InP semiconductor system has attracted a lot of interest for use in optoelectronic devices in the 9.5 to 16.5×10 2 nm wavelength region [1][2][3][4]. Although several reports on the degradation and lattice defects of In-GaAs p-i-n photodiodes induced by electron and gamma ray irradiation have been published [5][6][7][8], there are only a few reports available on radiation damage and recovery behaviour after neutron irradiation.…”