2004
DOI: 10.1016/j.apsusc.2004.05.005
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Study of structure, tribological properties and growth mechanism of DLC and nitrogen-doped DLC films deposited by electrochemical technique

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Cited by 124 publications
(57 citation statements)
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“…It can be observed an increase of roughness with the N 2 flow ratio increases (from 0 a 40%). This result is in agreement with previous work, [1] which shows that the surface roughness of N-DLC films tends to be higher with high N 2 flow rate in sputtering process. The increase in roughness is associated to the increase in sp 2 carbon bonds with nitrogen content increases.…”
supporting
confidence: 95%
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“…It can be observed an increase of roughness with the N 2 flow ratio increases (from 0 a 40%). This result is in agreement with previous work, [1] which shows that the surface roughness of N-DLC films tends to be higher with high N 2 flow rate in sputtering process. The increase in roughness is associated to the increase in sp 2 carbon bonds with nitrogen content increases.…”
supporting
confidence: 95%
“…[1][2][3] This occurs because DLC is a metastable form of amorphous carbon with graphite sp 2 and diamond sp 3 hybridized bonds. [4,5] However, the high internal stress, low electrical conductivity and low thermal stability limit its use in some applications, especially as an electronic or an active sensor material.…”
Section: Introductionmentioning
confidence: 99%
“…The curve-fitted XPS spectra of C1s in DLC films deposited in two different precursor gases of bonded with oxygen on the film surface [98]. By measuring the area of the de-convoluted sp 2 and sp 3 peaks after curve fitting, the area ratio of the peaks (I C=C /I C-C ) is determined to be 1.31 and 2.88 for DLC-M and DLC-A, respectively.…”
Section: X-ray Photoelectron Spectroscopy (Xps)mentioning
confidence: 99%
“…The C1s peak of the film deposited from C 2 H 2 /He can be fitted into four components around 284.4 eV, Figure 5 (a)). The one around 284.4 eV corresponds to sp 2 C-C bonds, that around 285.2 eV corresponds to sp 3 C-C bonds, that around 286.5 eV corresponds to C-O bonds, and that around 289.2 eV corresponds to C=O bonds [7][8][9]. For the film deposited from C 2 H 2 /N 2 , a new C1s peak near 287.1 eV assigned to C-N bonds was observed ( Figure 5 (b)).…”
Section: Introductionmentioning
confidence: 99%
“…From these results, we found that the film deposited from C 2 H 2 /N 2 contained nitrogen elements assigned to dilution gas and that C-N bonds were formed in the films. Many researchers reported that nitrogen incorporated a-C:H (or DLC) films are softer with a rougher surface compared with a-C:H films (or DLC) by AP-PECVD process or electron cyclotron resonance (ESR) plasma CVD process [3,7,10]. Kodama et al reported the C-N structures are likely to prevent carbon atoms from forming three-dimensional carbon structures as for the N 2 dilution gas, resulting in a reduction of the film density.…”
Section: Introductionmentioning
confidence: 99%