Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

Abstract

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 °C, and different In beam fluxes (BEPIn) ranging from 5.9 × 10−7 to 9.7 × 10−7 Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (101¯1) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 °C by MEE.

As4 overpressure effects on the phase purity of cubic GaN layers grown on GaAs substrates by RF-MBE

“…The h-GaN component was calculated by comparing the integrated X-ray diffraction intensity of the cubic (0 0 2) and hexagonal (1 01 1) planes, in the same diffraction volume, more details of the calculation procedure can be found in Ref. [23]. The RSM quantification demonstrated that the GaN samples have a high purity of cubic phase.…”

Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE

“…InN is a direct band-gap semiconductor with interesting physical properties such as; an infrared band-gap energy [1,2], a small electron effective mass [3,4], a high electronic mobility [5,6] and radiation resistance [7]. Important technological applications of this material include infrared light emitting diodes, high-speed and high-frequency devices, and photovoltaic systems [5].…”

Precession electron diffraction‐assisted crystal phase mapping of metastable c‐GaN films grown on (001) GaAs

“…However, this crystal phase presents large spontaneous and piezoelectric polarization fields that limit the free‐carrier recombination efficiency (Wei et al, ). Recently, in order to avoid the intrinsic polarization fields in electronic devices, intensive efforts have been made to grow the group III nitrides in the metastable phase, which has a cubic (zinc blende) structure with space group F‐43m (As et al, ; Casallas‐Moreno et al, ; Wei et al, ). The cubic phase does not exhibits spontaneous polarization due to the high crystal symmetry, and all piezoelectric polarization components vanish along the <100> direction of growth (Sun and Towe, ), contrary to the wurtzite type where the total polarization is never zero for any orientation (Wei et al, ).…”