Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation

Otsuka, Tomohiro; Yamaguchi, Yutaro; Shinjo, Shintaro; Oishi, Toshiyuki

doi:10.1109/bcicts45179.2019.8972751

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Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation

Cited by 3 publications

References 4 publications

Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter measurements

Study on Self-heating and Drain Voltage Effects for Buffer Traps in GaN HEMTs by Low Frequency S-parameter measurements

Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y₂₂ Parameters

Mechanisms of Buffer and Surface Traps in GaN HEMTs for Low Frequency Y21 and Y22 parameters

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