Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency <i>Y</i>₂₂ Parameters

Oishi, Toshiyuki; Otsuka, Tomohiro; Tabuchi, Masaya; Yamaguchi, Yutaro; Shinjo, Shintaro; Yamanaka, Koji

doi:10.1109/ted.2021.3115083

Cited by 11 publications

(23 citation statements)

References 28 publications

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“…Some correction factor may be introduced in the Arrhenius analysis to calculate the exact activation energy at higher V DS operations. For further information, please refer to the work of Oishi et al [27]; the authors developed an analytical model to mitigate the PF effects on the thermal activation energy computation from the Y 22 parameters. Therefore, it is recommended to conduct the DCT and Y-parameter characterizations at lower drain bias voltages to eliminate both the self-heating and PF effects.…”

Section: Measured and Simulated Y 22 Parametersmentioning

confidence: 99%

“…Hence, the characterization of traps in the HEMT is essential for improving the epilayer crystalline quality. The drain current transient (DCT) spectroscopy [8][9][10][11][12][13][14][15][16][17][18] and low-frequency (LF) output-admittance (Y 22 ) parameters [15,16,[19][20][21][22][23][24][25][26][27] are the well-estimated techniques to characterize the deep-level defects present in the AlGaN/GaN HEMT structures.…”

Section: Introductionmentioning

confidence: 99%

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Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

et al. 2021

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The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complement the trapping investigation. The Y22 and DCT measurements reveal the presence of an electron trap at 0.45–0.5 eV in the HEMT structure. On the other hand, two electron trap states at 0.2 eV and 0.45 eV are identified from the LF Y21 dispersion properties of the same device. The Y-parameter simulations are performed in Sentaurus TCAD in order to detect the spatial location of the traps. As an effective approach, physics-based TCAD models are calibrated by matching the simulated I-V with the measured DC data. The effect of surface donor energy level and trap density on the two-dimensional electron gas (2DEG) density is examined. The validated Y21 simulation results indicate the existence of both acceptor-like traps at EC –0.45 eV in the GaN buffer and surface donor states at EC –0.2 eV in the GaN/nitride interface. Thus, it is shown that LF Y21 characteristics could help in differentiating the defects present in the buffer and surface region, while the DCT and Y22 are mostly sensitive to the buffer traps.

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Section: Measured and Simulated Y 22 Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

et al. 2021

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“…There have been many reports on Y 22 and the traps in GaN layers for AlGaN/GaN HEMTs. 18,[20][21][22][23][24][25][26] However, there have been few reports for Y 21 . 19) Furthermore, information on the systematic bias dependence of the trap properties, which is important for circuit design and device physics, has not been obtained for Y 21 .…”

mentioning

confidence: 99%

“…The time constant of the traps is estimated from the inverse of peak frequency. 24,25) The activation energy was extracted from the slope of the Arrhenius plot using the least-squares method. As shown in Fig.…”

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Drain bias dependence of Y ₂₂ and Y ₂₁ signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors

Oishi,

Takada,

Kudara

et al. 2024

Jpn. J. Appl. Phys.

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Drain bias dependence of Y22 and Y21 signals has been investigated by two-port network measurement at the on-state condition of AlGaN/GaN high electron mobility transistors (HEMTs). Y22 has signals for Fe-related trap in GaN layers and self-heating effect. Y21 has a unique signal otherwise than the signals with the same drain bias dependence as Y22 signals.　 This unique signal is considered to originate from the AlGaN trap using the device simulation with the GaN trap, AlGaN trap, and self-heating effect. The peak frequency of GaN and AlGaN traps increases as increasing the drain voltages, while the peak frequency of the self-heating doesn’t depend on the drain voltages.

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Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations

Nishida¹,

Oishi²,

Otsuka³

et al. 2023

Solid-State Electronics

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Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y₂₂ Parameters

Cited by 11 publications

References 28 publications

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Drain bias dependence of Y ₂₂ and Y ₂₁ signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors

Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations

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Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y₂₂ Parameters

Cited by 11 publications

References 28 publications

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Drain bias dependence of Y 22 and Y 21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors

Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations

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Drain bias dependence of Y ₂₂ and Y ₂₁ signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors