Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

Guo, Xiao; Tang, Yang; Jiang, Yu-Long; Qu, Xin-Ping; Ru, Guo-Ping; Zhang, David Wei; Deduytsche, Davy; Detavernier, Christophe

doi:10.1016/j.mee.2013.01.006

Cited by 5 publications

(4 citation statements)

References 12 publications

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“…144,307,[378][379][380][381][382][383][384][385][386][387][388][389][390] However, the net effect of interfacial chalcogen varied, as both significant increases 307 and decreases 386 in the n-type SBH were observed. To introduce impurities such as metals, [391][392][393][394][395] dopants, 348,389,390,[396][397][398][399][400][401][402][403][404] semiconducting, 405,406 and insulating 407 elements to the MS interface, various other methods have also been used, including deposition, ion implantation, segregation, etc. As shown in Fig.…”

Section: B Sbh Modification With Thin Layer Of Insulating Materialsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

984

479

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The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

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Section: B Sbh Modification With Thin Layer Of Insulating Materialsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

984

479

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“…At high temperatures, NiSi over 10 nm in thickness would easily agglomerate to become nanodots, resulting in the narrowing of the process window [14,15]. Moreover, the rough interface between nano-scaled NiSi and Si would cause an increase of leakage current [16][17][18], and the differences in thermal expansion coefficient and crystal structure between NiSi and Si are large enough to induce dislocations during the formation process [19]. Additionally, the contact resistance of contemporary NiSi is still too high for next-generation MOSFETs [20].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial nickel disilicide with low resistivity and excellent reliability

Hsin

Deng

2016

Nanotechnology

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Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

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“…Addressing the challenge of metal silicides integration into micro and nanoelectronics devices overlaps with several important and pressing requirements relying on exquisite control of their synthesis process. Therefore, epitaxial growth of metal silicides [1] has been extensively studied over the past few years, the main goals being to reach low contact resistances, a high thermal stability and a thickness control for films at a nanometric scale [2][3][4][5][6][7]. Magnesium silicide thin films, among others, have attracted much interest as promising indirect-gap semiconductors to be used in various electronic, mechanical and infrared optoelectronics applications.…”

Section: Introductionmentioning

confidence: 99%

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

Sarpi

Zirmi

Putero

et al. 2018

Applied Surface Science

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International audienceUsing Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6–8 eV band gap) is also reported

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Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

Cited by 5 publications

References 12 publications

The physics and chemistry of the Schottky barrier height

The physics and chemistry of the Schottky barrier height

Epitaxial nickel disilicide with low resistivity and excellent reliability

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

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