2021
DOI: 10.1088/1742-6596/2086/1/012210
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Study of ripple formation on Si surface under Ga ion beam bombardment

Abstract: The process of microrelief formation on Si (100) surface under 30 keV Ga+ ion beam bombardment with doses 2⋅1017 - 4⋅1018 ion/cm2 at incident angles θ = 0 - 50° was studied. It was found that wave-like structures form on the surface at θ = 25° - 35° and doses 6⋅1017 - 2⋅1018 ion/cm2. The nice ripple formed at θ = 30±2° incident angles and irradiation dose 1018 ion/cm2.

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“…Perhaps, the most widely employed ion is Ga + , because of its use in experiments with a focused ion beam (FIB), which usually allows one to follow the patterning process by SEM imaging and even to monitor the ripple propagation [132]. Thus, a Ga + ion beam has been employed to produce ripple patterns on Si [132,133] and diamond [134] surfaces. It is worth noting that in these systems a ripple pattern was already produced for incidence angles below the threshold angle for pattern formation when noble gas ions are employed.…”
Section: Non-reactive Ionsmentioning
confidence: 99%
“…Perhaps, the most widely employed ion is Ga + , because of its use in experiments with a focused ion beam (FIB), which usually allows one to follow the patterning process by SEM imaging and even to monitor the ripple propagation [132]. Thus, a Ga + ion beam has been employed to produce ripple patterns on Si [132,133] and diamond [134] surfaces. It is worth noting that in these systems a ripple pattern was already produced for incidence angles below the threshold angle for pattern formation when noble gas ions are employed.…”
Section: Non-reactive Ionsmentioning
confidence: 99%