Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

Haugan, H. J.; Elhamri, S.; Szmulowicz, Frank; Ullrich, Bruno; Brown, Gail J.; Mitchel, W. C.

doi:10.1063/1.2884264

Cited by 45 publications

(28 citation statements)

References 19 publications

(20 reference statements)

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“…To achieve sufficient light absorption, small leakage current and fast response simultaneously, devices with a thickness of B300 nm are found to be optimal. Devices with an active area of 0.1 and 0.01 cm 2 were measured. Figure 5a shows the transient photocurrents of the devices measured under 0 bias at a light intensity of B10 mW cm À 2 and at a pulse frequency of 100 kHz (photoresponse of the silicon diode is shown for comparison).…”

Section: Resultsmentioning

confidence: 99%

“…And a built-in or applied electric field is necessary to separate the electrons and holes to produce an electric current. Various types of semiconductor materials have been applied in photodetectors, such as Si, InGaAs, ZnO, GaN, carbon nanotubes, quantum dots and conjugated polymers [1][2][3][4][5][6][7][8][9][10] . Although certain applications require different features, the key figure-of-merit parameters are responsivity (R), detectivity (D*), noise equivalent power (NEP), linear dynamic range (LDR) and response speed.…”

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confidence: 99%

“…P hotodetectors that capture light signals and convert them into electric signals are very important functional components in many applications [1][2][3] . A semiconductor material is essential to absorb the incident photons and create electron and hole pairs upon photo-excitation.…”

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Solution-processed hybrid perovskite photodetectors with high detectivity

et al. 2014

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Photodetectors capture optical signals with a wide range of incident photon flux density and convert them to electrical signals instantaneously. They have many important applications including imaging, optical communication, remote control, chemical/biological sensing and so on. Currently, GaN, Si and InGaAs photodetectors are used in commercially available products. Here we demonstrate a novel solution-processed photodetector based on an organic-inorganic hybrid perovskite material. Operating at room temperature, the photodetectors exhibit a large detectivity (the ability to detect weak signals) approaching 10 14 Jones, a linear dynamic range over 100 decibels (dB) and a fast photoresponse with 3-dB bandwidth up to 3 MHz. The performance is significantly better than most of the organic, quantum dot and hybrid photodetectors reported so far; and is comparable, or even better than, the traditional inorganic semiconductor-based photodetectors. Our results indicate that with proper device interface design, perovskite materials are promising candidates for low-cost, high-performance photodetectors.

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Solution-processed hybrid perovskite photodetectors with high detectivity

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“…We select a SL structure of 47.0 Å InAs/21.5 Å Ga 0.75 In 0.25 Sb proposed by Grein et al, 2 theoretically adjusted for the greatest possible detectivity, and optimize a growth parameter for the best possible material quality. Since SL material quality is strongly related to the densities of nonradiative SRH recombination centers and the residual dopings, 9 the impact of growth temperature (T g ) on the photoresponse (PR) intensity, and the charge carrier density and mobility will be investigated using photoconductivity and temperature-dependent Hall effect measurements. The 300 K recombination lifetime of a SL sample optimized for a strong PR signal will also be investigated by time-resolved pump-probe measurements.…”

Section: =2mentioning

confidence: 99%

“…For the SLs designed for the same 80 meV gap at 40 K, the electronic band structure of either 49.7 Å InAs/57.0 Å Ga 0. 9 In 0.1 Sb or 47.0 Å InAs/21. 5 Å Ga 0.75 In 0.25 Sb SL designs computed with the interface terms had the total lifetime of either 5 Â 10 À9 or 1.4 Â 10 À7 s. This difference leads the device detectivity to be either 5.2 Â 10 13 or 6.0 Â 10 14 cmHz 1 …”

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Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

Haugan

Brown

Elhamri

et al. 2012

Applied Physics Letters

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We explore the optimum growth space for a 47.0 Å InAs/21.5 Å Ga 0.75 In 0.25 Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 50 6 5 meV. However, SL quality is sensitive to the growth temperature (T g ). For the SLs grown at 390À470 C, a photoresponse signal gradually increases as T g increases from 400 to 440 C. Outside this temperature window, the SL quality deteriorates very rapidly. All SLs were n-type with mobility of $10 000 V/cm 2 and 300 K recombination lifetime of $70 ns for an optimized SL. V C 2012 American Institute of Physics.[http://dx.doi.org/10.1063/1.4764015] An alternative infrared material system proposed by Smith and Mailhiot 1 uses the concept of broken-gap type-II band alignment of the InAs/GaInSb strained layer superlattices (SLs) to achieve narrow gaps for the very long wavelength infrared (VLWIR) detection (>14 lm). By alloying indium to the GaSb layer, the lattice constant of the GaInSb layer increases. The biaxial tension in the InAs layer lowers the conduction band, while the biaxial compression in the GaInAs layer raises the heavy-hole (HH) band. As a result, the very narrow gap can be achieved without sacrificing optical absorption. In addition, an intentionally introduced strain can create a large splitting between the HH and light-hole bands in the p-type SLs; this situation can prevent the holehole Auger recombination process, therefore the Auger limited minority carrier lifetime, detectivity, and the background limited operating temperature can be significantly improved. Grein et al.2 demonstrated how a small variation in the strain splitting between the uppermost valence bands can create an order of magnitude differences on their calculated detectivities. For the SLs designed for the same 80 meV gap at 40 K, the electronic band structure of either 49.7 Å InAs/57.0 Å Ga 0.9 In 0.1 Sb or 47.0 Å InAs/21. 5 Å Ga 0.75 In 0.25 Sb SL designs computed with the interface terms had the total lifetime of either 5 Â 10 À9 or 1.4 Â 10 À7 s. This difference leads the device detectivity to be either 5.2 Â 10 13 or 6.0 Â 10 14 cmHz 1 =2 /W. Although the greater strain splitting generates the better detectivity, one has to limit the indium alloy composition below 30% due to difficulties in strain balancing above this percentage. The authors also computed device detectivity for the more realistic case of 82 meV SL detectors with a 35 ns Shockley-Read-Hall (SRH) lifetime.3 Unexpectedly, Auger processes were fast enough to overrule SRH processes and the detectors still can operate at reasonably high temperatures, roughly exceeding 150 K.3 Therefore, strained InAs/GaInSb SL system appeared to be an excellent choice for the VLWIR detection. Unfortunately, the VLWIR InAs/GInSb material growth studies are still in immature stage of development. Many crystal growers tend to believe that the existence of an alloy layer can create a higher degree of disorder caused by alloy scattering, indium segre...

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Flexible Wire‐Shaped Perovskite Photodetector via Joule Heating for Improved Crystallization and Performance

Adams

Adhikari

Parker

et al. 2018

Adv Materials Inter

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UV region with the best results showing 0.9 A W −1 responsivity and 0.28/5.3 s rise/decay time. When following a vertical device structure with multiple layers this complexity adds to both fabrication cost and difficulty. [5a,6] We herein report the development of a carbon-based flexible wire-shaped perovskite photodetector. This flexible wire-shaped device performs exceedingly well under low light environments (11 A W −1 ) and is easily woven into composites due to its flexibility and small diameter (≈400 µm). Using a novel in-house fabrication method, we have developed a rapid, repeatable, and scalable annealing process to move closer toward the potential of multifunctional composite materials and embedded wire-shaped photodetectors. The photodetector's small size is critical given that any addition to a composite part cannot have a negative impact on its mechanical properties. There has been reported success with integrated wires in composites for structural health monitoring. [7] As these systems use light emissions at 585 and 617 nm, we have characterized our device under the same conditions.Given the large drop in performance for wire-shaped devices when compared to equivalent structures on planar substrates, fabrication techniques were targeted as a point of improvement; noting that there is no standard method for wire-shaped devices. [8] For comparison, doctor-blade, [9] spray, [10] and spincoating [11] are all well documented and established fabrication methods for perovskite planar devices. However, wire-shaped cell fabrication exhibits less developed solutions [8a,12] and does not benefit from the history of extensive research found for planar thin film cells. It has been shown that methyl ammonium lead iodide perovskite (MAPbI 3 ) necessitates alternative processing such as two-step deposition or solvent engineering methods to create a pinhole-free, continuous thin film adding additional complexity in the fabrication process. [13] However, using MAPbI 3 we have created a continuous thin film on a wire using the joule heating method that shows comparable electrical characteristics to planar rigid perovskite photodetectors.We have developed a first flexible wire-shaped perovskite photodetector using joule heating method for annealing perovskite on CNY that is repeatable, cost effective, and scalable. This method utilizes joule heating in order to uniformly control the temperature of the wire substrate. We believe we have presented a novel solution able to compete with planar device. To the best of our knowledge, no other publication on a wire-shaped perovskite photodetector on thread-like CNY has Organolead triiodide perovskite (CH 3 NH 3 PbI 3 ) is used extensively as the absorber material for both solar cells and photodetectors; however, the reported photodetectors are all planar and flexible planar devices. To the best of knowledge the first flexible wire-shaped perovskite photodetector is reported. The performance of the wire-shaped perovskite photodetector on carbon nanotube yarn (CNY) critica...

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Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation

Cited by 45 publications

References 19 publications

Solution-processed hybrid perovskite photodetectors with high detectivity

Solution-processed hybrid perovskite photodetectors with high detectivity

Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

Flexible Wire‐Shaped Perovskite Photodetector via Joule Heating for Improved Crystallization and Performance

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