A feedback field-effect transistor (FBFET) takes advantage of the charges accumulated in its potential well and the restriction of carrier flow by its internal potential barrier to achieve superior electrical properties such as a subthreshold swing, threshold voltage, transconductance, and on/off current ratio. However, the device must deal with the modulation of non-uniformity under forward/reverse bias and with completely losing carrier flow control during reverse bias below a certain channel length. In this work, we address these significant issues by focusing on the width of the source/drain and demonstrate the operation of positive feedback in NMOS using only one additional step, resulting in a superior subthreshold swing (~3 mV/decade at 300 K), a low threshold voltage (~ 0.26 V), hysteresis window (0.018 V), and clear saturation region.