Study of random dopant fluctuation in PNPN feedback FET

Park, Jaesoo; Shin, Changhwan

doi:10.1088/1361-6641/ab7146

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…Therefore, research related to device optimization techniques and physics analysis is required to include latchup voltage and threshold voltage variations. Furthermore, the large memory window variation owing to the latch-up characteristics sensitive to the channel length and doping concentrations degrades the memory performance [17][18][19][20][21][22][23][24][25]. The channel length changes the current gain in coupled bipolar junction transistors (BJTs) within an FBFET, which induces variations in the latch-up and threshold voltages [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Woo

Kim²

2022

Semicond. Sci. Technol.

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This study demonstrates an optimal design method for the channel length in p+-i-p-n+ structure of feedback field-effect transistors (FBFETs) for next-generation memory devices. We demonstrate the dependence of latch-up and threshold voltages on the channel length in single-gated FBFETs with silicon channels consisting of zgated and non-gated regions. The operation principle of latch-up phenomena related to the channel length using an equivalent circuit in an FBFET has been described. The abrupt increase in the drain current of the single-gated FBFETs at the latch-up (threshold) voltage in the sweep of the drain (gate) voltage was analyzed with current gains in an equivalent circuit. The current gain depends on the gated and non-gated channel lengths; thereby, the latch-up and threshold voltages too depend on the gated and non-gated channel lengths. The dependences of the latch-up and threshold voltages on the non-gated channel length were found to be 3.26 times and 1.68 times higher than that on the gated channel length, respectively.

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Section: Introductionmentioning

confidence: 99%

Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Woo

Kim²

2022

Semicond. Sci. Technol.

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“…In order to use FBFETs in next-generation electronics, it is essential to examine their reliabilities under various conditions, including temperature and gate-bias stresses. To date, studies on the reliabilities have been conducted using simulation models to determine the dependence of their electrical properties on temperature [9][10][11]. Nevertheless, there has not been any research reported on their electrical stability under gate-bias stresses.…”

Section: Introductionmentioning

confidence: 99%

Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

Son

Cho

Kim³

2021

IEEE Access

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In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (SS) of 0.12 mV/dec, an on-current of ~10 -4 A, and a threshold voltage (V TH ) of -0.76 V. There is a negligible change in the on-current and SS when the FBFETs are stressed by a gate-bias voltage corresponding to an electric field of 5.4 MV/cm across the gate oxide. On the other hand, as the duration of the stress increases to 1000 s, the V TH shifts to -0.89 V and -0.67 V for NBS and PBS, respectively. The V TH was recovered to over 83% at a recovery bias voltage of 5 V. The electrical stabilities of FBFETs under NBS and PBS are discussed in this study.

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Understanding of carriers’ kinetic energy in steep-slope P+N+P+N+ feedback field effect transistor

Sung¹,

Shin²

2022

Semicond. Sci. Technol.

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A feedback field-effect transistor (FBFET) takes advantage of the charges accumulated in its potential well and the restriction of carrier flow by its internal potential barrier to achieve superior electrical properties such as a subthreshold swing, threshold voltage, transconductance, and on/off current ratio. However, the device must deal with the modulation of non-uniformity under forward/reverse bias and with completely losing carrier flow control during reverse bias below a certain channel length. In this work, we address these significant issues by focusing on the width of the source/drain and demonstrate the operation of positive feedback in NMOS using only one additional step, resulting in a superior subthreshold swing (~3 mV/decade at 300 K), a low threshold voltage (~ 0.26 V), hysteresis window (0.018 V), and clear saturation region.

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Study of random dopant fluctuation in PNPN feedback FET

Cited by 4 publications

References 21 publications

Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor

Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

Understanding of carriers’ kinetic energy in steep-slope P+N+P+N+ feedback field effect transistor

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