Study of radiation defect clusters, their structure and properties in, proton-irradiated silicon

Abstract

The production of radiation defects in float-zone and pulled n-Si (e = 1 to 500 Qcm) irradiated by protons with energy 16,30,660, and 8600 MeV a t T 5 320 K is studied. The changes in the initial rates of charge-carrier concentration and Hall mobility decrease under irradiation as a function of residual (technological) and doping impurity content are analysed. It is concluded that the impurity content has weak influence on radiation defect production processes under this irradiation.IEaK paaiwepbi ~n e p -~~e p r~e t 2 npoToHoB. Jle@eKTOB, 9 T O IlOCJIy?fMJIO OCHOBaWEi eM AJIR OUeHKH pa3MepOB Rnpa M npMMeCH0-3HaYHTeJIbHOg Mepe KOHUeHTpaUHe~ IIPHCYTCTBYIoWIlX B KpMCTaJIJIe IIpHMeCefi, TOrAa

Proton Beam Modification of Selected AIIIBVCompounds

“…U K J -predamage. Similar shifts in the temperature dependences of annealing are observed in GaAs [89] and Si [117] due to defect clustering.…”

Parameters of Defect Clusters in Irradiated Silicon and a Method for Their Determining

“…The defect clusters involve acceptor defects. If the defect density is small, there is no neutral region in the defect cluster [5]. I n such a case a t relatively low temperatures when the defects are completely ionized, y does not change with T increase.…”

“…An increase in the size of the peripheral defect cluster region with Tirr increase in pulled and floatzone crystals is connected with an increase in the diffusion rate and lifetime of primary radiation defects migrating from the core (increase of their path length). Tn pulled Si this is, in the first place, due to an increase in path length of vacancies which produce with oxygen atoms and C,-Oi associates A-centers and C-0-V, complexes, respectively, forming the peripheral defect cluster region [ 5 ] . I n float-zone crystals an increase in the peripheral region size is determined by an increase in path length of both vacancies and silicon interstitial atoms.…”

“…Therefore, we can assume that these "chains" of defect clusters are initiated by the secondarily knocked-on atonis ejected from the primary displacement cascade, which gather in the plane channels. The channeling in r and AT* calculatioris can be allowed for by simple substitution of l N~c for N D~ in (4) and (5) where I is the nuntber of subcascades.…”

The Effect of Dislocations on the Interaction Processes of Point and Group Radiation Defects in Silicon

“…High-encrgy protons are known to produce radiation defect clusters consisting of the core which involves preferentially intrinsic structural defects (vacancy and interstitial associates) and the peripheral region forrried niainly by the complexes of vacancies and interstitials with impurity atoms (in the material studied these are E-centers and carbon-containing defects [8]. Under heat treatment (T = 350 "C) of proton-irradiated crystals the core defects rearrange in high stable associates of the types multivacancy complexes, diinterstitials (Si-B3 centres) and so on stable up to T, 2 400 "C IS].…”