The Effect of Dislocations on the Interaction Processes of Point and Group Radiation Defects in Silicon

Abstract

The effect of dislocations on the interaction processes of point radiation defects generated by γ‐rays of 60Co (vacancies and interstitials) with impurity‐defect agglomerations formed during heat treatment (T = 350 °C, t = 20 min) of 640 MeV proton irradiated float‐zone n‐Si (ϱ = 100 Ω cm) with various dislocation densities (ND= 3 × 104to 1 × 107 cm−3) is studied. The experimental results are obtained from the analysis of the temperature (80 to 400 K) dependences of the Hall coefficient and the electrical conductivity. The experimentally observed high values of production rates of compensating and scattering radiation defects in γ‐ray irmdiated dislocated Si containing impurity‐ defect agglomerations are interpreted taking into account the vacancy and interstitial atom migration towards them. The determining role of elastic stress fields surrounding these agglomerations in the interaction processes of point and group radiation defects is shown.