Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Shubhakar, K.; Pey, K. L.; Raghavan, Nagarajan; Kushvaha, S. S.; Bosman, Michel; Wang, Zhongrui; O’Shea, S. J.

doi:10.1016/j.mee.2013.03.021

Cited by 49 publications

(28 citation statements)

References 15 publications

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“…The details of the fabrication and deposition conditions are given elsewhere. 12,24 As deposited amorphous phase of these lms were changed to polycrystalline in nature aer post annealing at 600 C in nitrogen ambient. A high resolution transmission electron microscopy (TEM) image of HFO/SiO 2 /Si interface was obtained to check the inter-diffusion across the layers and crystalline nature of the high-k HFO.…”

Section: Methodsmentioning

confidence: 99%

Light assisted irreversible resistive switching in ultra thin hafnium oxide

et al. 2015

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An ultra thin film ($5 nm) high-k Hafnium oxide dielectric, grown on a doped p-Si(100) substrate by the atomic layer deposition technique has been investigated for resistive and capacitive switching with and without illumination of light. As grown samples illustrate small non-switching leakage current under high applied electric fields and probe frequencies and trap charge assisted counter-clockwise capacitancevoltage behavior. A unique resistance switching was observed under illumination of 15-60 mW light. In the first cycle, the light assisted switching provide a 10 4 : 1 resistance ratio, which diminishes in the next cycle onward, which may be due to irreversible charge injection in the oxide layers. The band offset and band match-up energy diagram for the charge carriers responsible for resistive switching and charge trapping near the interface have been demonstrated under the application of a bias electric field and light.

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Section: Methodsmentioning

confidence: 99%

Light assisted irreversible resistive switching in ultra thin hafnium oxide

et al. 2015

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“…1(b), indicative of the morphological inhomogeneity. The larger thickness fluctuation after the annealing [12] could affect the performance and reliability of the HK dielectric. Variation of the surface roughness of the HK film can affect not only the local voltage drop across HK, but also across the underlying IL in the HK/IL dielectric stack.…”

Section: Resultsmentioning

confidence: 99%

Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer

Shubhakar

Raghavan

Kushvaha

et al. 2014

Microelectronics Reliability

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“…Various physical analysis studies based on localized stressing on blanket high-j films [11,21] using the scanning tunneling microscopy (STM) and conductive atomic force microscopy (CAFM) techniques have revealed that the filament is more prone to nucleate at the GB location. Furthermore, atomistic studies point to the tendency of vacancies to thermodynamically migrate from the grain region and segregate at the GB junctions [22].…”

Section: Microstructure Impact On Forming Distributionmentioning

confidence: 99%