Study of polarity effect in SiO<sub>x</sub>-based resistive switching memory

Chang, Yao‐Feng; Chen, Pai Yu; Chen, Yen Ting; Xue, Fei; Wang, Yanzhen; Zhou, Fei; Fowler, Burt; Lee, Jack C.

doi:10.1063/1.4742894

Cited by 54 publications

(41 citation statements)

References 13 publications

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“…For Si 9 O cluster, the O atom is adsorbed on the edge site of the lowest energy Si 9 cluster [30], which excellently agrees with our previous results using different method [27]. To our knowledge, the ground-state structure of Si 8 [14,19,20]. The most stable structure for Si 2 O 8 cluster consists of the two SiO 3 rhombuses Table 1: The total binding energy (E tot , in eV), electron affinity (EA, in eV), ionization potential (IP, in eV), the gap of HOMO-LOMO (E g , in eV), dipole moment (μ, in Debye), and total constant volume heat capacity (C v (tot), in cal/mol K), for the three lowest energy structures of Si n O (n=14-18) clusters.…”

Section: Si 10-m O M (M=1-8) Clusterssupporting

confidence: 80%

“…With the deeply understanding of the physical properties of the silicon oxide materials, more new application fields have been developed [6,7]. For example, the SiO x -based resistive switching behavior provides a new use for traditional SiO x materials [8]. In addition, the Si-O compounds are found to be very abundant in most dusty media in space, and thus important in astrophysical processes such as star and planet formation [9].…”

Section: Introductionmentioning

confidence: 99%

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First Principles Study on Sino (N=14-18) and Si10-Mom(M=1-8) Clusters

Li¹,

Zhu²

2014

J Theor Comput Sci

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Section: Si 10-m O M (M=1-8) Clusterssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

First Principles Study on Sino (N=14-18) and Si10-Mom(M=1-8) Clusters

Li¹,

Zhu²

2014

J Theor Comput Sci

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“…A similar surface-based mechanism is reported in other studies. 14,15 However, the switching mechanism in such studies is fundamentally different to that in reports, including ours 2,16 and subsequent reports, [17][18][19] which concentrate on intrinsic conductivity changes in bulk silicon oxide. Of particular note are two points: first, surface switching can operate only under vacuum conditions, while bulk switching is stable in ambient and, therefore, does not require the hermetic sealing of devices that is required to prevent the rapid oxidation of silicon filaments formed at oxide surface.…”

Section: Introductionmentioning

confidence: 41%

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Mehonić¹,

Buckwell²,

Montesi³

et al. 2015

Journal of Applied Physics

104

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We present an investigation of structural changes in silicon-rich silicon oxide metal-insulatormetal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy to examine the structural changes occurring as a result of switching. We confirm that protrusions formed at the surface of samples during switching are bubbles, which are likely to be related to the outdiffusion of oxygen. This supports existing models for valence-change based resistive switching in oxides. In addition, we describe parallel linear and nonlinear conduction pathways and suggest that the conductance quantum, G 0 , is a natural boundary between the high and low resistance states of our devices. V C 2015 AIP Publishing LLC. [http://dx

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“…11 Much work has been done to optimize the structure, fabrication procedure, dielectric material, and to understand the operating mechanisms of SiO x -based RRAM. [12][13][14][15][16][17][18][19][20][21] In these studies, voltage sweep measurements were the fundamental characterization method to obtain switching parameters, such as set voltage, reset voltage, and high-resistance state (HRS) to low-resistance state (LRS) resistance ratio.…”

mentioning

confidence: 99%