Study of point- and cluster-defects in radiation-damaged silicon

Donegani, Elena; Fretwurst, E.; Garutti, E.; Klanner, R.; Lindstroem, G.; Pintilie, I.; Radu, Roxana; Schwandt, J.

doi:10.1016/j.nima.2018.04.051

Cited by 15 publications

(9 citation statements)

References 14 publications

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“…The attempts to calculate the electric field in irradiated sensors using TCAD simulations with trap parameters from spectroscopic measurements have been only partially successful so far [3,4,5,6,7]. Difficulties are the large number of radiation-induced states [8] with frequently only poorly known properties, the problem of implementing cluster defects in the simulation [9] and the influence of high electric fields on the defect properties. Thus, a method to determine experimentally the electric field is highly desirable.…”

Section: Introductionmentioning

confidence: 99%

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Klanner

Kramberger

Mandić

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated n + p pad sensors and by the analysis of edge-TCT data from non-irradiated n + p strip-detectors. The method is then used to determine the position dependent electric field and charge density in n + p strip detectors irradiated by reactor neutrons to fluences between 1 and 10 × 10 15 cm −2 for forward-bias voltages between 25 V and up to 550 V and for reverse-bias voltages between 50 V and 800 V. In all cases the velocity profiles are well described. The electric fields and charge densities determined provide quantitative insights into the effects of radiation damage for silicon sensors by reactor neutrons.

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Section: Introductionmentioning

confidence: 99%

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Klanner

Kramberger

Mandić

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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“…For fluences ≥ 10 15 n eq /cm 2 , microscopic measurements like Thermally Stimulated Current techniques are not possible and for lower fluences only partial information about the defects is available. Furthermore, it is currently not possible to simulate cluster defects in TCAD [6]. Therefore, "effective models" are developed which assume a minimum number of point defect levels, and tune the parameters to reproduce macroscopic measurements.…”

Section: Introductionmentioning

confidence: 99%

A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation

Schwandt

Fretwurst

Garutti

et al. 2018

2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)

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For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated equivalent neutron fluence after 3000 fb −1 is 2·10 16 n eq /cm 2 , and the IEL (Ionizing Energy Loss) dose in the SiO 2 12 MGy. The optimisation of the pixel sensors and the understanding of their performance as a function of fluence and dose makes a radiation damage model for TCAD simulations, which describes the available experimental data, highly desirable. The currently available bulk-damage models are not able to describe simultaneously the measurements of dark current (I-V), capacitance-voltage (C-V) and charge collection efficiency (CCE) of pad diodes for fluences ≥ 1 · 10 15 n eq /cm 2 . Therefore, for the development and validation of a new accurate bulk damage model we use I-V, C-V and CCE measurements on pad diodes available within the CMS-HPK campaign and data from samples irradiated recently with 24 GeV/c protons. For the determination of the radiation-induced damage parameters we utilise the "optimiser" of Synopsys TCAD, which allows the minimisation of the difference between the measured and simulated I-V, C-V and CCE. The outcome of this optimisation, the Hamburg Penta Trap Model (HPTM), provides a consistent and accurate description of the measurements of diodes irradiated with protons in the fluence range from 3·10 14 n eq /cm 2 to 1.3·10 16 n eq /cm 2 .

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“…It is not surprising for X-ray irradiations, which cannot lead to any atomic displacement. However, 1-and 3-MeV electron irradiations are known to deposit a significant displacement contribution as discussed in Section II and reported in [19] and [20]. Hence, despite the admitted high sensitivity of PPD CIS to displacement damage, the DDD-induced by the considered 1-and 3-MeV electron irradiations are not visible in the dark current distributions.…”

Section: Radiation-induced Dark Current Distributionsmentioning

confidence: 85%

Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors

Roch

Virmontois

Paillet

et al. 2020

IEEE Trans. Nucl. Sci.

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This article investigates the dark current as well as the dark current random telegraph signal (RTS) after 1-MeV electron, 3-MeV electron, and 10-keV X-ray irradiations in a pinned photodiode CMOS image sensor (CIS). A large range of deposited ionizing dose from 10 to 525 krad(SiO 2) is considered. The displacement damage dose deposited through electron irradiation ranges from 60 to 1200 TeV • g −1. Results on dark current distributions highlight the predominance of the ionizing damage in opposition to the displacement damage induced by the electron irradiations. Moreover, the dark current distributions also suggest that if the ionizing dose is high enough [i.e., beyond 50 krad(SiO 2)], the trapped positive charges in the silicon oxides create high magnitude electric field regions leading to an electric field enhancement (EFE) of the dark current which is neither present at lower doses nor in pristine image sensors. This EFE mechanism also seems to have a strong influence on the RTS leading to a clear discrepancy from the existing dark current nonuniformity model developed for amplitude distributions in CISs as well as from what is reported in the literature in the more studied ionizing dose range. Annealing treatments after electron irradiations have highlighted the existence of specific population of pixels sharing the same well-defined maximum transition amplitudes (i.e., maximum amplitude between two dark current levels). The results suggest the use of maximum transition amplitude spectroscopy applied to dark current RTS to push forward the investigation on radiation-induced defects creation and identification. Index Terms-Annealing, CMOS image sensor (CIS), dark current, dark current spectroscopy (DCS), displacement damage dose (DDD), electric field enhancement (EFE), electron irradiation, pinned photodiode (PPD), random telegraph signal (RTS), total ionizing dose (TID), X-ray irradiation.

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Study of point- and cluster-defects in radiation-damaged silicon

Cited by 15 publications

References 14 publications

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation

Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors

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