Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Klanner, R.; Kramberger, G.; Mandić, I.; Mikuž, M.; Milovanovic, Marko; Schwandt, Joern

doi:10.1016/j.nima.2019.162987

Cited by 14 publications

(12 citation statements)

References 38 publications

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“…Similar results are reported in Ref. [13], where the position dependence of the electric field of a 300 μm 𝑛 + 𝑝 strip sensor has been obtained from edge-TCT data. As discussed before, the voltage at which the central low-field region vanishes corresponds to the full-depletion volte, 𝑈 fd .…”

Section: Electric Field Below Full Depletion and Intrinsic Resistivitysupporting

confidence: 89%

“…In this paper the problem is tackled by parameterising 𝜌(𝑦) guided by the results of Ref. [12,13], where it is shown that three regions can be distinguished in partially-depleted irradiated pad diodes (the signs refer to a 𝑝-type sensor with 𝑦 = 0 at the 𝑛 + 𝑝 junction):…”

Section: Admittance Model and Analysis Methodsmentioning

confidence: 99%

“…For Based on these considerations and in particular on the results of Ref. [13], the following parametrisation of 𝜌(𝑦) is assumed:…”

Section: Admittance Model and Analysis Methodsmentioning

confidence: 99%

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Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?

Klanner,

Schwandt

2021

Preprint

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A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (𝑌 -𝑓 ), and current measurements (𝐼). The method is applied to 𝑌 -𝑓 and 𝐼 data from square 𝑛 + 𝑝 diodes of 25 mm 2 area irradiated by 24 GeV/c protons to four 1 MeV neutron equivalent fluences between 3 × 10 15 cm −2 and 13 × 10 15 cm −2 . The measurement conditions were: Reverse voltages between 1 V and 1000 V, frequencies between 100 Hz and 2 MHz and temperatures of −20 • C and −30 • C. The position dependence of the electric field is parameterised by a linear dependence at the two sides of the diode, and a constant in the centre. The parameters as a function of voltage, temperature and irradiation fluence are determined by fits of the model to the data. For voltages below about 300 V all data are well described by the model, and the results for the electric field agrees with expectations: Depleted high-field regions towards the two faces and a constant low electric field in the centre, with values which agrees with the field in an ohmic resistor with approximately the intrinsic resistivity of silicon. For conditions at which the low field region disappears and the diode is fully depleted, the method fails. This happens around 300 V for the lowest irradiation fluence at −30 • C, and at higher voltages for higher fluences and lower temperatures. In the conclusions the successes and problems of the method are discussed.

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Section: Electric Field Below Full Depletion and Intrinsic Resistivitysupporting

confidence: 89%

Section: Admittance Model and Analysis Methodsmentioning

confidence: 99%

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Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?

Klanner,

Schwandt

2021

Preprint

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“…Such a position-dependent electric charge density is discussed in the literature through different arguments, i.e. variation of the dielectric constant with impurity density/position in heavy doping and p–n junction [76], variation of the electric field with the position in highly irradiated silicon sensors [77], variation of the density of impurity with position in heavy doped regions such as bipolar transistors, p – n junctions and solar cells [76], among others. It is motivating to obtain a position-dependent charge density and electric field using LOSA.…”

Section: Fractal Gl Theory Of Superconductivitymentioning

confidence: 99%

Superconductivity and nucleation from fractal anisotropy and product-like fractal measure

El-Nabulsi

2021

Proc. R. Soc. A.

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Superconductivity is analysed based on the product-like fractal measure approach with fractal dimension α introduced by Li and Ostoja-Starzewski in their attempt to explore anisotropic fractal elastic media. Our study shows the emergence of a massless state at the boundary of the superconductor and the simultaneous occurrence of isothermal and adiabatic processes in the superconductor depending on the position of the electrons. Several physical quantities were found to be position-dependent comparable with those arising in heavy doping and p–n junction. At the boundary of the superconductor, a shrinkage of the magnetic field was observed, leading to a scenario equivalent to the Meissner–Ochsenfeld effect. An enhancement of the London penetration depth is revealed and such an improvement was observed in pnictides at the onset of commensurate spin-density-wave order inside the superconducting phase at zero temperature. The Bardeen–Cooper–Schrieffer theory was also analysed and the appearance of zero-energy states is detected. Nucleation of superconductivity in a bulk was also studied. The system acts as a quantum damped harmonic oscillator and our analysis showed that type-I superconductivity occurs when κ < 2 / ( 1 + α ) , whereas type II occurs for κ > 2 / ( 1 + α ) , where κ is the Ginzburg–Landau parameter. The transition at the passage from the ‘genuine’ to the ‘intermediate’ type-I estimates 0.767767 < α ≤ 1 .

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“…The high dark current for a reverse biased diode, which is dominated by holes at the cathode and by electrons at the anode, results in a position-dependent filling of the defects and a completely different electric field distribution than in the detector before irradiation. High field regions appear at anodes and cathodes, a phenomenon called "double junction", and lower field regions in-between [8,9]. Thus the concept of uniform doping breaks down and most of the methods used to characterize silicon before irradiation are no more applicable.…”

Section: Radiation Damagementioning

confidence: 99%

Solid State Detectors

Lütz¹,

Klanner²

2020

Particle Physics Reference Library

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Semiconductor detectors, and in particular silicon detectors, are very well suited for detection and measurement of light and of ionizing radiation caused by interaction with charged particles and (X-ray) photons. Precise position, time and energy measurement can be combined when use is made of the excellent intrinsic material properties in well thought out detector concepts. Development and large scale use of silicon detectors has been initiated by particle physics. The discovery of the rare and short lived charmed particles lead to the desire to use their decay topology as signature for identification and separation from non-charm background. Detectors were required that combined very good position measurement (in the range of several μm) with high rate capability (few hundred kHz), a task not achievable with available detectors at that time. Semiconductor detectors, in particular silicon and germanium detectors were used for quite some time, but not too frequently, in Nuclear Physics for the In the updated version a number of detector developments which took place after the publication of the original version have been taken into account. These are in particular new sections on Radiation Damage, 3-D Detectors, MAPS (Monolithic Active Pixel Sensors), SiPMs (Silicon Photomultipliers) and Ultrafast Tracking Detectors (LGAD = Low Gain Avalanche Detectors). In addition, the section Summary and Outlook has been updated. The author G. Lutz is deceased at the time of publication.

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Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Cited by 14 publications

References 38 publications

Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?

Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?

Superconductivity and nucleation from fractal anisotropy and product-like fractal measure

Solid State Detectors

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