Study of plasma CVD silicon-germanium films using electron beam techniques

Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition

“…The ion beam co-sputtering of the Ge wafers and the Si target was carried out continuously at a current of 7 mA for 3 h. The nominal thickness of the SiGe layer is~130 nm.Fig. 1displays the component analysis outputted by EDX examination as the reference[13].…”